Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIJH440E-T1-GE3

SIJH440E-T1-GE3

SIJH440E-T1-GE3

Part NumberSIJH440E-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 200A POWERPAK8

DatasheetSIJH440E

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 200A (Tc) 158W (Tc) Surface Mount PowerPAK® 8 x 8

To learn about the specification of SIJH440E-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIJH440E-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIJH440E-T1-GE3.
We are offering SIJH440E-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIJH440E-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIJH440E
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	0.96mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	195nC @ 4.5V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	20330pF @ 20V
FET Feature	-
Power Dissipation (Max)	158W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 8 x 8
Package / Case	8-PowerTDFN

SIJH440E-T1-GE3 - Related Products

	STP270N8F7	STMicroelectronics, N-Channel 80V 180A (Tc) 315W (Tc) Through Hole TO-220, DeepGATE™, STripFET™ VII	View
	BUK9214-30A,118	Nexperia USA Inc., N-Channel 30V 63A (Tc) 107W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	PMPB23XNEZ	Nexperia USA Inc., N-Channel 20V 7A (Ta) 1.7W (Ta) Surface Mount 6-DFN2020MD (2x2),	View
	DMN3404L-7	Diodes Incorporated, N-Channel 30V 5.8A (Ta) 720mW (Ta) Surface Mount SOT-23-3,	View
	IRFS7430TRLPBF	Infineon Technologies, N-Channel 40V 195A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®, StrongIRFET™	View
	FQPF16N25C	ON Semiconductor, N-Channel 250V 15.6A (Tc) 43W (Tc) Through Hole TO-220F, QFET®	View
	FDB8860	ON Semiconductor, N-Channel 30V 80A (Tc) 254W (Tc) Surface Mount TO-263AB, PowerTrench®	View
	SIRA52ADP-T1-RE3	Vishay Siliconix, N-Channel 40V 41.6A (Ta), 131A (Tc) 4.8W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	TPN8R903NL,LQ	Toshiba Semiconductor and Storage, N-Channel 30V 20A (Tc) 700mW (Ta), 22W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H	View
	FQN1N60CTA	ON Semiconductor, N-Channel 600V 300mA (Tc) 1W (Ta), 3W (Tc) Through Hole TO-92-3, QFET®	View
	STD13N60DM2	STMicroelectronics, N-Channel 600V 11A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ DM2	View
	STP80NF55-06	STMicroelectronics, N-Channel 55V 80A (Tc) 300W (Tc) Through Hole TO-220AB, STripFET™ II	View

SIJH440E-T1-GE3 - Tags

SIJH440E-T1-GE3 SIJH440E-T1-GE3 PDF SIJH440E-T1-GE3 datasheet SIJH440E-T1-GE3 specification SIJH440E-T1-GE3 image SIJH440E-T1-GE3 India Renesas Electronics India SIJH440E-T1-GE3 buy SIJH440E-T1-GE3 SIJH440E-T1-GE3 price SIJH440E-T1-GE3 distributor SIJH440E-T1-GE3 supplier SIJH440E-T1-GE3 wholesales