Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR410DP-T1-GE3

SIR410DP-T1-GE3

SIR410DP-T1-GE3

Part NumberSIR410DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 35A PPAK SO-8

DatasheetSIR410DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 35A (Tc) 4.2W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR410DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR410DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR410DP-T1-GE3.
We are offering SIR410DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR410DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR410DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 10V
FET Feature	-
Power Dissipation (Max)	4.2W (Ta), 36W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR410DP-T1-GE3 - Related Products

	NTMFS5H400NLT1G	ON Semiconductor, N-Channel 40V 46A (Ta), 330A (Tc) 3.3W (Ta), 160W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	IPU95R450P7AKMA1	Infineon Technologies, N-Channel 950V 14A (Tc) 104W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7	View
	NTMFS4C10NT1G	ON Semiconductor, N-Channel 30V 8.2A (Ta) 750mW (Ta), 23.6W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	2N7002K-7	Diodes Incorporated, N-Channel 60V 380mA (Ta) 370mW (Ta) Surface Mount SOT-23-3,	View
	BUK7E13-60E,127	Nexperia USA Inc., N-Channel 60V 58A (Tc) 96W (Tc) Through Hole I2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	FDD6N25TM	ON Semiconductor, N-Channel 250V 4.4A (Tc) 50W (Tc) Surface Mount D-Pak, UniFET™	View
	FDMC86520DC	ON Semiconductor, N-Channel 60V 17A (Ta), 40A (Tc) 3W (Ta), 73W (Tc) Surface Mount Dual Cool ™ 33, Dual Cool™, PowerTrench®	View
	IXTP08N50D2	IXYS, N-Channel 500V 800mA (Tc) 60W (Tc) Through Hole TO-220AB,	View
	FDB088N08	ON Semiconductor, N-Channel 75V 120A (Tc) 160W (Tc) Surface Mount D²PAK, PowerTrench®	View
	CSD19502Q5B	Texas Instruments, N-Channel 80V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View
	TK4R4P06PL,RQ	Toshiba Semiconductor and Storage, N-Channel 60V 58A (Tc) 87W (Tc) Surface Mount DPAK, U-MOSIX-H	View
	BUK9M52-40EX	Nexperia USA Inc., N-Channel 40V 17.6A 31W Surface Mount LFPAK33, Automotive, AEC-Q101, TrenchMOS™	View

SIR410DP-T1-GE3 - Tags

SIR410DP-T1-GE3 SIR410DP-T1-GE3 PDF SIR410DP-T1-GE3 datasheet SIR410DP-T1-GE3 specification SIR410DP-T1-GE3 image SIR410DP-T1-GE3 India Renesas Electronics India SIR410DP-T1-GE3 buy SIR410DP-T1-GE3 SIR410DP-T1-GE3 price SIR410DP-T1-GE3 distributor SIR410DP-T1-GE3 supplier SIR410DP-T1-GE3 wholesales