Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR410DP-T1-GE3

SIR410DP-T1-GE3

SIR410DP-T1-GE3

Part NumberSIR410DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 35A PPAK SO-8

DatasheetSIR410DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 35A (Tc) 4.2W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR410DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR410DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR410DP-T1-GE3.
We are offering SIR410DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR410DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR410DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 10V
FET Feature	-
Power Dissipation (Max)	4.2W (Ta), 36W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR410DP-T1-GE3 - Related Products

	IRFS7440TRLPBF	Infineon Technologies, N-Channel 40V 120A (Tc) 208W (Tc) Surface Mount TO-263 (D²Pak), HEXFET®, StrongIRFET™	View
	AOB66920L	Alpha & Omega Semiconductor Inc., N-Channel 100V 22.5A (Ta), 80A (Tc) 8.3W (Ta), 100W (Tc) Surface Mount TO-263 (D2Pak), AlphaSGT™	View
	PSMN012-60YS,115	Nexperia USA Inc., N-Channel 60V 59A (Tc) 89W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	IPB80N08S2L07ATMA1	Infineon Technologies, N-Channel 75V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™	View
	R6012JNJGTL	Rohm Semiconductor, N-Channel 600V 12A (Tc) 160W (Tc) Surface Mount LPTS (D2PAK),	View
	IRF7862TRPBF	Infineon Technologies, N-Channel 30V 21A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	IRF740LCPBF	Vishay Siliconix, N-Channel 400V 10A (Tc) 125W (Tc) Through Hole TO-220AB,	View
	PSMN012-100YS,115	Nexperia USA Inc., N-Channel 100V 60A (Tc) 130W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	STW48N60M2	STMicroelectronics, N-Channel 600V 42A (Tc) 300W (Tc) Through Hole TO-247, MDmesh™ M2	View
	BUK9Y11-80EX	Nexperia USA Inc., N-Channel 80V 84A (Tc) 194W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™	View
	IXFH30N85X	IXYS, N-Channel 850V 30A (Tc) 695W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™	View
	IRFS11N50ATRRP	Vishay Siliconix, N-Channel 500V 11A (Tc) 170W (Tc) Surface Mount D2PAK,	View

SIR410DP-T1-GE3 - Tags

SIR410DP-T1-GE3 SIR410DP-T1-GE3 PDF SIR410DP-T1-GE3 datasheet SIR410DP-T1-GE3 specification SIR410DP-T1-GE3 image SIR410DP-T1-GE3 India Renesas Electronics India SIR410DP-T1-GE3 buy SIR410DP-T1-GE3 SIR410DP-T1-GE3 price SIR410DP-T1-GE3 distributor SIR410DP-T1-GE3 supplier SIR410DP-T1-GE3 wholesales