Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR416DP-T1-GE3

SIR416DP-T1-GE3

SIR416DP-T1-GE3

Part NumberSIR416DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 50A PPAK SO-8

DatasheetSIR416DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR416DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR416DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR416DP-T1-GE3.
We are offering SIR416DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR416DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR416DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3350pF @ 20V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR416DP-T1-GE3 - Related Products

	SIR616DP-T1-GE3	Vishay Siliconix, N-Channel 200V 20.2A (Tc) 52W (Tc) Surface Mount PowerPAK® SO-8, ThunderFET®	View
	FQB33N10TM	ON Semiconductor, N-Channel 100V 33A (Tc) 3.75W (Ta), 127W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View
	RUC002N05HZGT116	Rohm Semiconductor, N-Channel 50V 200mA (Ta) 350mW (Ta) Surface Mount SST3, Automotive, AEC-Q101	View
	STFH24N60M2	STMicroelectronics, N-Channel 600V 18A (Tc) 35W (Tc) Through Hole TO-220FP, MDmesh™	View
	IRFP064PBF	Vishay Siliconix, N-Channel 60V 70A (Tc) 300W (Tc) Through Hole TO-247-3,	View
	IPB200N25N3GATMA1	Infineon Technologies, N-Channel 250V 64A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	SUG90090E-GE3	Vishay Siliconix, N-Channel 200V 100A (Tc) 395W (Tc) Through Hole TO-247AC, ThunderFET®	View
	IPT111N20NFDATMA1	Infineon Technologies, N-Channel 200V 96A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™	View
	IRFR3707ZTRPBF	Infineon Technologies, N-Channel 30V 56A (Tc) 50W (Tc) Surface Mount D-Pak, HEXFET®	View
	CSD18563Q5A	Texas Instruments, N-Channel 60V 100A (Ta) 3.2W (Ta), 116W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	SIR826BDP-T1-RE3	Vishay Siliconix, N-Channel 80V 19.8A (Ta), 80.8A (Tc) 5W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	MCQ4410-TP	Micro Commercial Co, N-Channel 30V 7.5A (Ta) 1.4W (Ta) Surface Mount 8-SOP,	View

SIR416DP-T1-GE3 - Tags

SIR416DP-T1-GE3 SIR416DP-T1-GE3 PDF SIR416DP-T1-GE3 datasheet SIR416DP-T1-GE3 specification SIR416DP-T1-GE3 image SIR416DP-T1-GE3 India Renesas Electronics India SIR416DP-T1-GE3 buy SIR416DP-T1-GE3 SIR416DP-T1-GE3 price SIR416DP-T1-GE3 distributor SIR416DP-T1-GE3 supplier SIR416DP-T1-GE3 wholesales