SIR460DP-T1-GE3

Part NumberSIR460DP-T1-GE3

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR460DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	54nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2071pF @ 15V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 48W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

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SISH108DN-T1-GE3	Vishay Siliconix, N-Channel 20V 14A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH, TrenchFET® Gen II	View
PSMN3R0-60BS,118	Nexperia USA Inc., N-Channel 60V 100A (Tc) 306W (Tc) Surface Mount D2PAK,	View
STH270N8F7-6	STMicroelectronics, N-Channel 80V 180A (Tc) 315W (Tc) Surface Mount H²PAK, DeepGATE™, STripFET™ VII	View