FDB86135
FDB86135
Part Number FDB86135
Description MOSFET N-CH 100V D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Detailed Description N-Channel 100V 75A (Tc) 2.4W (Ta), 227W (Tc) Surface Mount D²PAK (TO-263AB)
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FDB86135 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDB86135
Standard Package 1
Manufacturer ON Semiconductor
Series PowerTrench®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 116nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7295pF @ 25V
FET Feature -
Power Dissipation (Max) 2.4W (Ta), 227W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BSC190N12NS3GATMA1
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