Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR606BDP-T1-RE3

SIR606BDP-T1-RE3

SIR606BDP-T1-RE3

Part NumberSIR606BDP-T1-RE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 100V POWERPAK SO-8

DatasheetSIR606BDP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 10.9A (Ta), 38.7A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR606BDP-T1-RE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR606BDP-T1-RE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR606BDP-T1-RE3.
We are offering SIR606BDP-T1-RE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR606BDP-T1-RE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR606BDP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	10.9A (Ta), 38.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	17.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1470pF @ 50V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 62.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR606BDP-T1-RE3 - Related Products

	IPAW60R380CEXKSA1	Infineon Technologies, N-Channel 600V 15A (Tc) 31W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™	View
	APT30F50B	Microsemi Corporation, N-Channel 500V 30A (Tc) 415W (Tc) Through Hole TO-247 [B], POWER MOS 8™	View
	TSM045NA03CR RLG	Taiwan Semiconductor Corporation, N-Channel 30V 108A (Tc) 89W (Tc) Surface Mount 8-PDFN (5x6),	View
	SI4848DY-T1-E3	Vishay Siliconix, N-Channel 150V 2.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®	View
	FQPF13N50CF	ON Semiconductor, N-Channel 500V 13A (Tc) 48W (Tc) Through Hole TO-220F, FRFET®	View
	BSC018N04LSGATMA1	Infineon Technologies, N-Channel 40V 30A (Ta), 100A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	IXTX6N200P3HV	IXYS, N-Channel 2000V 6A (Tc) 960W (Tc) Through Hole TO-247PLUS-HV,	View
	IXFR80N50P	IXYS, N-Channel 500V 45A (Tc) 360W (Tc) Through Hole ISOPLUS247™, HiPerFET™, PolarHT™	View
	FDD6N50FTM	ON Semiconductor, N-Channel 500V 5.5A (Tc) 89W (Tc) Surface Mount D-Pak, UniFET™	View
	AON6360	Alpha & Omega Semiconductor Inc., N-Channel 30V 36A (Ta), 85A (Tc) 6.2W (Ta), 42W (Tc) Surface Mount 8-DFN (5x6),	View
	IRFL014TRPBF	Vishay Siliconix, N-Channel 60V 2.7A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223,	View
	2SK3746-1E	ON Semiconductor, N-Channel 1500V 2A (Ta) 2.5W (Ta), 110W (Tc) Through Hole TO-3P-3L,	View

SIR606BDP-T1-RE3 - Tags

SIR606BDP-T1-RE3 SIR606BDP-T1-RE3 PDF SIR606BDP-T1-RE3 datasheet SIR606BDP-T1-RE3 specification SIR606BDP-T1-RE3 image SIR606BDP-T1-RE3 India Renesas Electronics India SIR606BDP-T1-RE3 buy SIR606BDP-T1-RE3 SIR606BDP-T1-RE3 price SIR606BDP-T1-RE3 distributor SIR606BDP-T1-RE3 supplier SIR606BDP-T1-RE3 wholesales