Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR610DP-T1-RE3

SIR610DP-T1-RE3

SIR610DP-T1-RE3

Part NumberSIR610DP-T1-RE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 200V 35.4A SO-8

DatasheetSIR610DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 35.4A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR610DP-T1-RE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR610DP-T1-RE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR610DP-T1-RE3.
We are offering SIR610DP-T1-RE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR610DP-T1-RE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR610DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	ThunderFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	35.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	31.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1380pF @ 100V
FET Feature	-
Power Dissipation (Max)	104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR610DP-T1-RE3 - Related Products

	BUK7626-100B,118	Nexperia USA Inc., N-Channel 100V 49A (Tc) 157W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	SI5418DU-T1-GE3	Vishay Siliconix, N-Channel 30V 12A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount PowerPAK® ChipFet Single, TrenchFET®	View
	PMV65ENEAR	Nexperia USA Inc., N-Channel 40V 2.7A (Ta) 490mW (Ta), 6.25W (Tc) Surface Mount TO-236AB, Automotive, AEC-Q101	View
	SPA08N80C3XKSA1	Infineon Technologies, N-Channel 800V 8A (Tc) 40W (Tc) Through Hole PG-TO220-FP, CoolMOS™	View
	IRFS9N60ATRLPBF	Vishay Siliconix, N-Channel 600V 9.2A (Tc) 170W (Tc) Surface Mount D2PAK,	View
	R6020JNZ4C13	Rohm Semiconductor, N-Channel 600V 20A (Tc) 252W (Tc) Through Hole TO-247G,	View
	BSP297H6327XTSA1	Infineon Technologies, N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®	View
	FDA24N50	ON Semiconductor, N-Channel 500V 24A (Tc) 270W (Tc) Through Hole TO-3PN, UniFET™	View
	TK100S04N1L,LQ	Toshiba Semiconductor and Storage, N-Channel 40V 100A (Ta) 100W (Tc) Surface Mount DPAK+, U-MOSVIII-H	View
	PMCM4401UNEZ	Nexperia USA Inc., N-Channel 20V 400mW Surface Mount 4-WLCSP (2x2),	View
	IRF630STRLPBF	Vishay Siliconix, N-Channel 200V 9A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263),	View
	SSM3K16FU,LF	Toshiba Semiconductor and Storage, N-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount USM, π-MOSVI	View

SIR610DP-T1-RE3 - Tags

SIR610DP-T1-RE3 SIR610DP-T1-RE3 PDF SIR610DP-T1-RE3 datasheet SIR610DP-T1-RE3 specification SIR610DP-T1-RE3 image SIR610DP-T1-RE3 India Renesas Electronics India SIR610DP-T1-RE3 buy SIR610DP-T1-RE3 SIR610DP-T1-RE3 price SIR610DP-T1-RE3 distributor SIR610DP-T1-RE3 supplier SIR610DP-T1-RE3 wholesales