Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR616DP-T1-GE3

SIR616DP-T1-GE3

SIR616DP-T1-GE3

Part NumberSIR616DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 200V 20.2A SO-8

DatasheetSIR616DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 20.2A (Tc) 52W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR616DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR616DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR616DP-T1-GE3.
We are offering SIR616DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR616DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR616DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	ThunderFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	50.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	28nC @ 7.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1450pF @ 100V
FET Feature	-
Power Dissipation (Max)	52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR616DP-T1-GE3 - Related Products

	CSD16570Q5B	Texas Instruments, N-Channel 25V 100A (Ta) 3.2W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View
	IXFH50N30Q3	IXYS, N-Channel 300V 50A (Tc) 690W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™	View
	STD10NF10T4	STMicroelectronics, N-Channel 100V 13A (Tc) 50W (Tc) Surface Mount DPAK, STripFET™ II	View
	IPD60R600C6ATMA1	Infineon Technologies, N-Channel 600V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3, CoolMOS™ C6	View
	IRFR224TRPBF	Vishay Siliconix, N-Channel 250V 3.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	IRFH5300TRPBF	Infineon Technologies, N-Channel 30V 40A (Ta), 100A (Tc) 3.6W (Ta), 250W (Tc) Surface Mount 8-PQFN (5x6), HEXFET®	View
	SIHB22N60ET1-GE3	Vishay Siliconix, N-Channel 600V 21A (Tc) 227W (Tc) Surface Mount TO-263 (D²Pak),	View
	STP11N65M5	STMicroelectronics, N-Channel 650V 9A (Tc) 85W (Tc) Through Hole TO-220, MDmesh™ V	View
	STF18NM80	STMicroelectronics, N-Channel 800V 17A (Tc) 40W (Tc) Through Hole TO-220FP, MDmesh™	View
	IPZA60R180P7XKSA1	Infineon Technologies, N-Channel 600V 18A (Tc) 72W (Tc) Through Hole PG-TO247-4, CoolMOS™ P7	View
	FDMS7660	ON Semiconductor, N-Channel 30V 25A (Ta), 42A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	BUK9M17-30EX	Nexperia USA Inc., N-Channel 30V 37A (Tc) 44W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101, TrenchMOS™	View

SIR616DP-T1-GE3 - Tags

SIR616DP-T1-GE3 SIR616DP-T1-GE3 PDF SIR616DP-T1-GE3 datasheet SIR616DP-T1-GE3 specification SIR616DP-T1-GE3 image SIR616DP-T1-GE3 India Renesas Electronics India SIR616DP-T1-GE3 buy SIR616DP-T1-GE3 SIR616DP-T1-GE3 price SIR616DP-T1-GE3 distributor SIR616DP-T1-GE3 supplier SIR616DP-T1-GE3 wholesales