Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR826DP-T1-GE3

SIR826DP-T1-GE3

SIR826DP-T1-GE3

Part NumberSIR826DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 80V 60A PPAK SO-8

DatasheetSIR826DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR826DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR826DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR826DP-T1-GE3.
We are offering SIR826DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR826DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR826DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2900pF @ 40V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR826DP-T1-GE3 - Related Products

	SI4126DY-T1-GE3	Vishay Siliconix, N-Channel 30V 39A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO, TrenchFET®	View
	STD96N3LLH6	STMicroelectronics, N-Channel 30V 80A (Tc) 70W (Tc) Surface Mount DPAK, DeepGATE™, STripFET™ VI	View
	BUK9Y22-100E,115	Nexperia USA Inc., N-Channel 100V 49A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	IRFP27N60KPBF	Vishay Siliconix, N-Channel 600V 27A (Tc) 500W (Tc) Through Hole TO-247-3,	View
	TPH11003NL,LQ	Toshiba Semiconductor and Storage, N-Channel 30V 32A (Ta) 1.6W (Ta), 21W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H	View
	FDS3580	ON Semiconductor, N-Channel 80V 7.6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	IPW60R031CFD7XKSA1	Infineon Technologies, N-Channel 650V 63A (Tc) 278W (Tc) Through Hole PG-TO247-3, CoolMOS™ CFD7	View
	STD25NF10LT4	STMicroelectronics, N-Channel 100V 25A (Tc) 100W (Tc) Surface Mount DPAK, STripFET™ II	View
	RJK005N03FRAT146	Rohm Semiconductor, N-Channel 30V 500mA (Ta) 200mW (Ta) Surface Mount SMT3, Automotive, AEC-Q101	View
	STD16N65M5	STMicroelectronics, N-Channel 650V 12A (Tc) 90W (Tc) Surface Mount DPAK, MDmesh™ V	View
	RD3P100SNTL1	Rohm Semiconductor, N-Channel 100V 10A (Ta) 20W (Tc) Surface Mount TO-252,	View
	AUIRFS4310Z	Infineon Technologies, N-Channel 100V 120A (Tc) 250W (Tc) Surface Mount D2PAK, HEXFET®	View

SIR826DP-T1-GE3 - Tags

SIR826DP-T1-GE3 SIR826DP-T1-GE3 PDF SIR826DP-T1-GE3 datasheet SIR826DP-T1-GE3 specification SIR826DP-T1-GE3 image SIR826DP-T1-GE3 India Renesas Electronics India SIR826DP-T1-GE3 buy SIR826DP-T1-GE3 SIR826DP-T1-GE3 price SIR826DP-T1-GE3 distributor SIR826DP-T1-GE3 supplier SIR826DP-T1-GE3 wholesales