Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIRA10BDP-T1-GE3

SIRA10BDP-T1-GE3

SIRA10BDP-T1-GE3

Part NumberSIRA10BDP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 30V

DatasheetSIRA10BDP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 30A (Ta), 60A (Tc) 5W (Ta), 43W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIRA10BDP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIRA10BDP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIRA10BDP-T1-GE3.
We are offering SIRA10BDP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIRA10BDP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIRA10BDP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	30A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36.2nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	1710pF @ 15V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 43W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIRA10BDP-T1-GE3 - Related Products

	BUK6C2R1-55C,118	Nexperia USA Inc., N-Channel 55V 228A (Tc) 300W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	IXTH02N250	IXYS, N-Channel 2500V 200mA (Tc) 83W (Tc) Through Hole TO-247 (IXTH),	View
	STB45N65M5	STMicroelectronics, N-Channel 650V 35A (Tc) 210W (Tc) Surface Mount D2PAK, MDmesh™ V	View
	TSM4424CS RVG	Taiwan Semiconductor Corporation, N-Channel 20V 8A (Tc) 2.5W (Ta) Surface Mount 8-SOP,	View
	IXFN230N10	IXYS, N-Channel 100V 230A (Tc) 700W (Tc) Chassis Mount SOT-227B,	View
	IRL2203NSTRLPBF	Infineon Technologies, N-Channel 30V 116A (Tc) 3.8W (Ta), 180W (Tc) Surface Mount D2PAK, HEXFET®	View
	STP9N65M2	STMicroelectronics, N-Channel 650V 5A (Tc) 60W (Tc) Through Hole TO-220, MDmesh™	View
	IRF740STRLPBF	Vishay Siliconix, N-Channel 400V 10A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,	View
	BUK9Y22-30B,115	Nexperia USA Inc., N-Channel 30V 37.7A (Tc) 59.4W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	DMN100-7-F	Diodes Incorporated, N-Channel 30V 1.1A (Ta) 500mW (Ta) Surface Mount SC-59-3,	View
	AO3162	Alpha & Omega Semiconductor Inc., N-Channel 600V 34mA (Ta) 1.39W (Ta) Surface Mount SOT-23,	View
	STD60NF55LAT4	STMicroelectronics, N-Channel 55V 60A (Tc) 110W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, SuperFET® II	View

SIRA10BDP-T1-GE3 - Tags

SIRA10BDP-T1-GE3 SIRA10BDP-T1-GE3 PDF SIRA10BDP-T1-GE3 datasheet SIRA10BDP-T1-GE3 specification SIRA10BDP-T1-GE3 image SIRA10BDP-T1-GE3 India Renesas Electronics India SIRA10BDP-T1-GE3 buy SIRA10BDP-T1-GE3 SIRA10BDP-T1-GE3 price SIRA10BDP-T1-GE3 distributor SIRA10BDP-T1-GE3 supplier SIRA10BDP-T1-GE3 wholesales