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SIRA10BDP-T1-GE3

SIRA10BDP-T1-GE3

Part NumberSIRA10BDP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 30V

DatasheetSIRA10BDP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 30A (Ta), 60A (Tc) 5W (Ta), 43W (Tc) Surface Mount PowerPAK® SO-8

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SIRA10BDP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIRA10BDP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	30A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36.2nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	1710pF @ 15V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 43W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

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SIRA10BDP-T1-GE3 - Tags

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