SIRA10BDP-T1-GE3
SIRA10BDP-T1-GE3
Part Number SIRA10BDP-T1-GE3 Description MOSFET N-CHAN 30V Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 30A (Ta), 60A (Tc) 5W (Ta), 43W (Tc) Surface Mount PowerPAK® SO-8
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SIRA10BDP-T1-GE3 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIRA10BDP Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Gen IV Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 30A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36.2nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 15V FET Feature - Power Dissipation (Max) 5W (Ta), 43W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
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