SIRA10BDP-T1-GE3
SIRA10BDP-T1-GE3
Part Number SIRA10BDP-T1-GE3
Description MOSFET N-CHAN 30V
Package / Case PowerPAK® SO-8
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Lead Time To be Confirmed
Detailed Description N-Channel 30V 30A (Ta), 60A (Tc) 5W (Ta), 43W (Tc) Surface Mount PowerPAK® SO-8
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SIRA10BDP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIRA10BDP
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET® Gen IV
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36.2nC @ 10V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 15V
FET Feature -
Power Dissipation (Max) 5W (Ta), 43W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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