Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIRA10DP-T1-GE3

SIRA10DP-T1-GE3

SIRA10DP-T1-GE3

Part NumberSIRA10DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 60A PPAK SO-8

DatasheetSIRA10DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 60A (Tc) 5W (Ta), 40W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIRA10DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIRA10DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIRA10DP-T1-GE3.
We are offering SIRA10DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIRA10DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIRA10DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	51nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	2425pF @ 15V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 40W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIRA10DP-T1-GE3 - Related Products

	TSM045NB06CR RLG	Taiwan Semiconductor Corporation, N-Channel 60V 16A (Ta), 104A (Tc) 3.1W (Ta), 136W (Tc) Surface Mount 8-PDFN (5x6),	View
	SPU02N60C3BKMA1	Infineon Technologies, N-Channel 650V 1.8A (Tc) 25W (Tc) Through Hole PG-TO251-3, CoolMOS™	View
	STL12N65M2	STMicroelectronics, N-Channel 650V 5A (Tc) 48W (Tc) Surface Mount PowerFlat™ (5x6) HV, MDmesh™	View
	BSZ42DN25NS3GATMA1	Infineon Technologies, N-Channel 250V 5A (Tc) 33.8W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	SQ7414AENW-T1_GE3	Vishay Siliconix, N-Channel 60V 18A (Tc) 62W (Tc) Surface Mount PowerPAK® 1212-8,	View
	IXFT26N100XHV	IXYS, N-Channel 1000V 26A (Ta) 860mW (Ta) Surface Mount TO-268HV (IXFT), HiPerFET™	View
	TK39J60W5,S1VQ	Toshiba Semiconductor and Storage, N-Channel 600V 38.8A (Ta) 270W (Tc) Through Hole TO-3P(N), DTMOSIV	View
	STW26NM60N	STMicroelectronics, N-Channel 600V 20A (Tc) 140W (Tc) Through Hole TO-247-3, MDmesh™ II	View
	TSM60N750CH C5G	Taiwan Semiconductor Corporation, N-Channel 600V 6A (Tc) 62.5W (Tc) Through Hole TO-251 (IPAK),	View
	STP110N8F6	STMicroelectronics, N-Channel 80V 110A (Tc) 200W (Tc) Through Hole TO-220, STripFET™ F6	View
	STW45N60DM2AG	STMicroelectronics, N-Channel 600V 34A (Tc) 250W (Tc) Through Hole TO-247, Automotive, AEC-Q101, MDmesh™ DM2	View
	IRFP3077PBF	Infineon Technologies, N-Channel 75V 120A (Tc) 340W (Tc) Through Hole TO-247AC, HEXFET®	View

SIRA10DP-T1-GE3 - Tags

SIRA10DP-T1-GE3 SIRA10DP-T1-GE3 PDF SIRA10DP-T1-GE3 datasheet SIRA10DP-T1-GE3 specification SIRA10DP-T1-GE3 image SIRA10DP-T1-GE3 India Renesas Electronics India SIRA10DP-T1-GE3 buy SIRA10DP-T1-GE3 SIRA10DP-T1-GE3 price SIRA10DP-T1-GE3 distributor SIRA10DP-T1-GE3 supplier SIRA10DP-T1-GE3 wholesales