Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIRA88DP-T1-GE3

SIRA88DP-T1-GE3

SIRA88DP-T1-GE3

Part NumberSIRA88DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 45.5A POWERPAKSO

DatasheetSIRA88DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 45.5A (Tc) 25W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIRA88DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIRA88DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIRA88DP-T1-GE3.
We are offering SIRA88DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIRA88DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIRA88DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	45.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12.5nC @ 4.5V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	985pF @ 15V
FET Feature	-
Power Dissipation (Max)	25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIRA88DP-T1-GE3 - Related Products

	R6002END3TL1	Rohm Semiconductor, N-Channel 600V 1.7A (Tc) 26W (Tc) Surface Mount TO-252,	View
	FDB024N06	ON Semiconductor, N-Channel 60V 120A (Tc) 395W (Tc) Surface Mount D²PAK, PowerTrench®	View
	STP45N10F7	STMicroelectronics, N-Channel 100V 45A (Tc) 60W (Tc) Through Hole TO-220, DeepGATE™, STripFET™ VII	View
	NX7002BKMYL	Nexperia USA Inc., N-Channel 60V 350mA (Ta) 350mW (Ta), 3.1W (Tc) Surface Mount DFN1006-3, TrenchMOS™	View
	BUK762R6-40E,118	Nexperia USA Inc., N-Channel 40V 100A (Tc) 263W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	IRFP3710PBF	Infineon Technologies, N-Channel 100V 57A (Tc) 200W (Tc) Through Hole TO-247AC, HEXFET®	View
	SUD23N06-31L-T4-E3	Vishay Siliconix, N-Channel 60V 3W (Ta), 100W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	TPH1R403NL,L1Q	Toshiba Semiconductor and Storage, N-Channel 30V 60A (Ta) 1.6W (Ta), 64W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H	View
	AOTF20S60L	Alpha & Omega Semiconductor Inc., N-Channel 600V 20A (Tc) 37.8W (Tc) Through Hole TO-220-3F, aMOS™	View
	IRF7490TRPBF	Infineon Technologies, N-Channel 100V 5.4A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	DMG3418L-7	Diodes Incorporated, N-Channel 30V 4A (Ta) 1.4W (Ta) Surface Mount SOT-23,	View
	IXTA6N100D2	IXYS, N-Channel 1000V 6A (Tc) 300W (Tc) Surface Mount TO-263 (IXTA),	View

SIRA88DP-T1-GE3 - Tags

SIRA88DP-T1-GE3 SIRA88DP-T1-GE3 PDF SIRA88DP-T1-GE3 datasheet SIRA88DP-T1-GE3 specification SIRA88DP-T1-GE3 image SIRA88DP-T1-GE3 India Renesas Electronics India SIRA88DP-T1-GE3 buy SIRA88DP-T1-GE3 SIRA88DP-T1-GE3 price SIRA88DP-T1-GE3 distributor SIRA88DP-T1-GE3 supplier SIRA88DP-T1-GE3 wholesales