Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIRC10DP-T1-GE3

SIRC10DP-T1-GE3

SIRC10DP-T1-GE3

Part NumberSIRC10DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 60A POWERPAKSO-8

DatasheetSIRC10DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 60A (Tc) 43W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIRC10DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIRC10DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIRC10DP-T1-GE3.
We are offering SIRC10DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIRC10DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIRC10DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	1873pF @ 15V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	43W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIRC10DP-T1-GE3 - Related Products

	IPD90N03S4L02ATMA1	Infineon Technologies, N-Channel 30V 90A (Tc) 136W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	STD2N95K5	STMicroelectronics, N-Channel 950V 2A (Tc) 45W (Tc) Surface Mount DPAK, SuperMESH5™	View
	IRF3415STRLPBF	Infineon Technologies, N-Channel 150V 43A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK, HEXFET®	View
	IXFH58N20	IXYS, N-Channel 200V 58A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™	View
	SUD25N15-52-E3	Vishay Siliconix, N-Channel 150V 25A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	SUM70040E-GE3	Vishay Siliconix, N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
	IPA60R099P7XKSA1	Infineon Technologies, N-Channel 600V 31A (Tc) 29W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™ P7	View
	SIS434DN-T1-GE3	Vishay Siliconix, N-Channel 40V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	IPD040N03LGATMA1	Infineon Technologies, N-Channel 30V 90A (Tc) 79W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	DN3135N8-G	Microchip Technology, N-Channel 350V 135mA (Tj) 1.3W (Ta) Surface Mount TO-243AA (SOT-89),	View
	FDP050AN06A0	ON Semiconductor, N-Channel 60V 18A (Ta), 80A (Tc) 245W (Tc) Through Hole TO-220-3, PowerTrench®	View
	IXFH270N06T3	IXYS, N-Channel 60V 270A (Tc) 480W (Tc) Through Hole TO-247, HiperFET™, TrenchT3™	View

SIRC10DP-T1-GE3 - Tags

SIRC10DP-T1-GE3 SIRC10DP-T1-GE3 PDF SIRC10DP-T1-GE3 datasheet SIRC10DP-T1-GE3 specification SIRC10DP-T1-GE3 image SIRC10DP-T1-GE3 India Renesas Electronics India SIRC10DP-T1-GE3 buy SIRC10DP-T1-GE3 SIRC10DP-T1-GE3 price SIRC10DP-T1-GE3 distributor SIRC10DP-T1-GE3 supplier SIRC10DP-T1-GE3 wholesales