FDD5810-F085
FDD5810-F085
Part Number FDD5810-F085
Description MOSFET N-CH 60V 37A DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 60V 7.4A (Ta), 37A (Tc) 72W (Tc) Surface Mount D-PAK (TO-252)
To learn about the specification of FDD5810-F085, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FDD5810-F085 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FDD5810-F085.
We are offering FDD5810-F085 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
FDD5810-F085 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDD5810_F085
Standard Package 1
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 7.4A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1890pF @ 25V
FET Feature -
Power Dissipation (Max) 72W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
FDD5810-F085 - Related ProductsMore >>
SQJQ100E-T1_GE3
Vishay Siliconix, N-Channel 40V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8, Automotive, AEC-Q101, TrenchFET®
View
FDMA7632
ON Semiconductor, N-Channel 30V 9A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®
View
CSD15380F3T
Texas Instruments, N-Channel 20V 500mA (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
View
CSD18510KTT
Texas Instruments, N-Channel 40V 274A (Tc) 250W (Ta) Surface Mount DDPAK/TO-263-3, NexFET™
View
FDD7N20TM
ON Semiconductor, N-Channel 200V 5A (Tc) 43W (Tc) Surface Mount D-Pak, UniFET™
View
DMG4N65CTI
Diodes Incorporated, N-Channel 650V 4A (Tc) 8.35W (Ta) Through Hole ITO-220AB,
View
AUIRFZ44N
Infineon Technologies, N-Channel 55V 49A (Tc) 94W (Tc) Through Hole TO-220AB, HEXFET®
View
IPD80R900P7ATMA1
Infineon Technologies, N-Channel 800V 6A (Tc) 45W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7
View
IPW65R110CFDFKSA1
Infineon Technologies, N-Channel 650V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO247-3, CoolMOS™
View
IXFN120N20
IXYS, N-Channel 200V 120A (Tc) 600W (Tc) Chassis Mount SOT-227B, HiPerFET™
View
2SK3566(STA4,Q,M)
Toshiba Semiconductor and Storage, N-Channel 900V 2.5A (Ta) 40W (Tc) Through Hole TO-220SIS, π-MOSIV
View
SSM3K329R,LF
Toshiba Semiconductor and Storage, N-Channel 30V 3.5A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSIII
View
FDD5810-F085 - Tags