Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ DMG4N65CTI

DMG4N65CTI

DMG4N65CTI

Part NumberDMG4N65CTI

ManufacturerDiodes Incorporated

DescriptionMOSFET N-CH 650V 4A ITO-220AB

DatasheetDMG4N65CTI

Package / CaseTO-220-3 Full Pack, Isolated Tab

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 4A (Tc) 8.35W (Ta) Through Hole ITO-220AB

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DMG4N65CTI - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	DMG4N65CTI
Standard Package	50
Manufacturer	Diodes Incorporated
Series	-
Packaging	Tube
Part Status	Last Time Buy
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13.5nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	900pF @ 25V
FET Feature	-
Power Dissipation (Max)	8.35W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ITO-220AB
Package / Case	TO-220-3 Full Pack, Isolated Tab

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