DMG4N65CTI
DMG4N65CTI
Part Number DMG4N65CTI
Description MOSFET N-CH 650V 4A ITO-220AB
Package / Case TO-220-3 Full Pack, Isolated Tab
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 650V 4A (Tc) 8.35W (Ta) Through Hole ITO-220AB
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DMG4N65CTI - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet DMG4N65CTI
Standard Package 50
Manufacturer Diodes Incorporated
Series -
Packaging Tube
Part Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.5nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 25V
FET Feature -
Power Dissipation (Max) 8.35W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ITO-220AB
Package / Case TO-220-3 Full Pack, Isolated Tab
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