DMG4N65CTI
DMG4N65CTI
Part Number DMG4N65CTI Description MOSFET N-CH 650V 4A ITO-220AB Package / Case TO-220-3 Full Pack, Isolated TabUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 4A (Tc) 8.35W (Ta) Through Hole ITO-220AB
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DMG4N65CTI - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet DMG4N65CTI Standard Package 50 Manufacturer Diodes Incorporated Series - Packaging Tube Part Status Last Time Buy FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3Ohm @ 2A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 900pF @ 25V FET Feature - Power Dissipation (Max) 8.35W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ITO-220AB Package / Case TO-220-3 Full Pack, Isolated Tab
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