Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIRC18DP-T1-GE3

SIRC18DP-T1-GE3

SIRC18DP-T1-GE3

Part NumberSIRC18DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 60A POWERPAKSO-8

DatasheetSIRC18DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 60A (Tc) 54.3W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIRC18DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIRC18DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIRC18DP-T1-GE3.
We are offering SIRC18DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIRC18DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIRC18DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	111nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	5060pF @ 15V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	54.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIRC18DP-T1-GE3 - Related Products

	NTMFS4926NT1G	ON Semiconductor, N-Channel 30V 9A (Ta), 44A (Tc) 920mW (Ta), 21.6W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	TSM900N10CP ROG	Taiwan Semiconductor Corporation, N-Channel 100V 15A (Tc) 50W (Tc) Surface Mount TO-252, (D-Pak),	View
	IXTH15N50L2	IXYS, N-Channel 500V 15A (Tc) 300W (Tc) Through Hole TO-247 (IXTH), Linear L2™	View
	FDD3690	ON Semiconductor, N-Channel 100V 22A (Tc) 3.8W (Ta), 60W (Tc) Surface Mount D-PAK (TO-252AA), PowerTrench®	View
	NTA4153NT1G	ON Semiconductor, N-Channel 20V 915mA (Ta) 300mW (Tj) Surface Mount SC-75, SOT-416,	View
	IRLML6246TRPBF	Infineon Technologies, N-Channel 20V 4.1A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	IRFB7446PBF	Infineon Technologies, N-Channel 40V 120A (Tc) 99W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™	View
	IRF530NSTRLPBF	Infineon Technologies, N-Channel 100V 17A (Tc) 3.8W (Ta), 70W (Tc) Surface Mount D2PAK, HEXFET®	View
	STD18N65M5	STMicroelectronics, N-Channel 650V 15A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ V	View
	2N7002-G	Microchip Technology, N-Channel 60V 115mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB),	View
	DMN66D0LT-7	Diodes Incorporated, N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount SOT-523,	View
	FDD3672-F085	ON Semiconductor, N-Channel 100V 44A (Tc) 144W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, UltraFET™	View

SIRC18DP-T1-GE3 - Tags

SIRC18DP-T1-GE3 SIRC18DP-T1-GE3 PDF SIRC18DP-T1-GE3 datasheet SIRC18DP-T1-GE3 specification SIRC18DP-T1-GE3 image SIRC18DP-T1-GE3 India Renesas Electronics India SIRC18DP-T1-GE3 buy SIRC18DP-T1-GE3 SIRC18DP-T1-GE3 price SIRC18DP-T1-GE3 distributor SIRC18DP-T1-GE3 supplier SIRC18DP-T1-GE3 wholesales