Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIRC18DP-T1-GE3

SIRC18DP-T1-GE3

SIRC18DP-T1-GE3

Part NumberSIRC18DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 60A POWERPAKSO-8

DatasheetSIRC18DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 60A (Tc) 54.3W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIRC18DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIRC18DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIRC18DP-T1-GE3.
We are offering SIRC18DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIRC18DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIRC18DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	111nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	5060pF @ 15V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	54.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIRC18DP-T1-GE3 - Related Products

	IRFB3206PBF	Infineon Technologies, N-Channel 60V 120A (Tc) 300W (Tc) Through Hole TO-220AB, HEXFET®	View
	FDS4470	ON Semiconductor, N-Channel 40V 12.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	IPW65R065C7XKSA1	Infineon Technologies, N-Channel 650V 33A (Tc) 171W (Tc) Through Hole PG-TO247-3, CoolMOS™ C7	View
	IRFS3307TRLPBF	Infineon Technologies, N-Channel 75V 120A (Tc) 200W (Tc) Surface Mount D2PAK, HEXFET®	View
	BUK7Y18-75B,115	Nexperia USA Inc., N-Channel 75V 49A (Tc) 105W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	IRF7862TRPBF	Infineon Technologies, N-Channel 30V 21A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	IXFA14N60P3	IXYS, N-Channel 600V 14A (Tc) 327W (Tc) Surface Mount TO-263 (IXFA), HiPerFET™, Polar3™	View
	STB16NF06LT4	STMicroelectronics, N-Channel 60V 16A (Tc) 45W (Tc) Surface Mount D2PAK, STripFET™	View
	CSD17318Q2	Texas Instruments, N-Channel 30V 25A (Tc) 16W (Tc) Surface Mount 6-WSON (2x2), NexFET™	View
	FCD4N60TM	ON Semiconductor, N-Channel 600V 3.9A (Tc) 50W (Tc) Surface Mount D-Pak, SuperFET™	View
	TSM60NB190CF C0G	Taiwan Semiconductor Corporation, N-Channel 600V 18A (Tc) 59.5W (Tc) Through Hole ITO-220S,	View
	IRFZ24PBF	Vishay Siliconix, N-Channel 60V 17A (Tc) 60W (Tc) Through Hole TO-220AB,	View

SIRC18DP-T1-GE3 - Tags

SIRC18DP-T1-GE3 SIRC18DP-T1-GE3 PDF SIRC18DP-T1-GE3 datasheet SIRC18DP-T1-GE3 specification SIRC18DP-T1-GE3 image SIRC18DP-T1-GE3 India Renesas Electronics India SIRC18DP-T1-GE3 buy SIRC18DP-T1-GE3 SIRC18DP-T1-GE3 price SIRC18DP-T1-GE3 distributor SIRC18DP-T1-GE3 supplier SIRC18DP-T1-GE3 wholesales