Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS106DN-T1-GE3

SIS106DN-T1-GE3

SIS106DN-T1-GE3

Part NumberSIS106DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 60V POWERPAK 1212-

DatasheetSIS106DN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 9.8A (Ta), 16A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SIS106DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS106DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS106DN-T1-GE3.
We are offering SIS106DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS106DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS106DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	9.8A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	18.5mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	540pF @ 30V
FET Feature	-
Power Dissipation (Max)	3.2W (Ta), 24W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SIS106DN-T1-GE3 - Related Products

	BSS123,215	Nexperia USA Inc., N-Channel 100V 150mA (Ta) 250mW (Ta) Surface Mount TO-236AB, TrenchMOS™	View
	STN2NF10	STMicroelectronics, N-Channel 100V 2.4A (Tc) 3.3W (Tc) Surface Mount SOT-223, STripFET™ II	View
	IPP093N06N3GXKSA1	Infineon Technologies, N-Channel 60V 50A (Tc) 71W (Tc) Through Hole PG-TO220-3, OptiMOS™	View
	STF12N60M2	STMicroelectronics, N-Channel 600V 9A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ M2	View
	IRF730ASTRLPBF	Vishay Siliconix, N-Channel 400V 5.5A (Tc) 74W (Tc) Surface Mount D2PAK,	View
	STW13N60M2	STMicroelectronics, N-Channel 600V 11A (Tc) 110W (Tc) Through Hole TO-247, MDmesh™ II Plus	View
	NTB082N65S3F	ON Semiconductor, N-Channel 650V 40A (Tc) 313W (Tc) Surface Mount D²PAK (TO-263), SuperFET® III	View
	RJK0305DPB-02#J0	Renesas Electronics America, N-Channel 30V 30A (Ta) Surface Mount LFPAK,	View
	TSM2N100CP ROG	Taiwan Semiconductor Corporation, N-Channel 1000V 1.85A (Tc) 77W (Tc) Surface Mount TO-252, (D-Pak),	View
	DMN4034SSS-13	Diodes Incorporated, N-Channel 40V 5.4A (Ta) 1.56W (Ta) Surface Mount 8-SO,	View
	SQM10250E_GE3	Vishay Siliconix, N-Channel 250V 65A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak), Automotive, AEC-Q101, TrenchFET®	View
	PSMN028-100YS,115	Nexperia USA Inc., N-Channel 100V 42A (Tc) 89W (Tc) Surface Mount LFPAK56, Power-SO8,	View

SIS106DN-T1-GE3 - Tags

SIS106DN-T1-GE3 SIS106DN-T1-GE3 PDF SIS106DN-T1-GE3 datasheet SIS106DN-T1-GE3 specification SIS106DN-T1-GE3 image SIS106DN-T1-GE3 India Renesas Electronics India SIS106DN-T1-GE3 buy SIS106DN-T1-GE3 SIS106DN-T1-GE3 price SIS106DN-T1-GE3 distributor SIS106DN-T1-GE3 supplier SIS106DN-T1-GE3 wholesales