SIS435DNT-T1-GE3
SIS435DNT-T1-GE3
Part Number SIS435DNT-T1-GE3
Description MOSFET P-CH 20V 30A 1212-8
Package / Case PowerPAK® 1212-8
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 20V 30A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
To learn about the specification of SIS435DNT-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS435DNT-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS435DNT-T1-GE3.
We are offering SIS435DNT-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIS435DNT-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIS435DNT
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 5.4mOhm @ 13A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180nC @ 8V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 5700pF @ 10V
FET Feature -
Power Dissipation (Max) 3.7W (Ta), 39W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
SIS435DNT-T1-GE3 - Related ProductsMore >>
DMP4065SQ-7
Diodes Incorporated, P-Channel 40V 2.4A (Ta) 720mW (Ta) Surface Mount SOT-23,
View
IRFU5505PBF
Infineon Technologies, P-Channel 55V 18A (Tc) 57W (Tc) Through Hole IPAK (TO-251), HEXFET®
View
RZR020P01TL
Rohm Semiconductor, P-Channel 12V 2A (Ta) 1W (Ta) Surface Mount TSMT3,
View
RF4E075ATTCR
Rohm Semiconductor, P-Channel 30V 7.5A (Ta) 2W (Ta) Surface Mount HUML2020L8,
View
DMP1096UCB4-7
Diodes Incorporated, P-Channel 12V 2.6A (Ta) 820mW (Ta) Surface Mount U-WLB1010-4,
View
DMP1200UFR4-7
Diodes Incorporated, P-Channel 12V 2A (Ta) 480mW (Ta) Surface Mount X2-DFN1010-3,
View
SSM3J117TU,LF
Toshiba Semiconductor and Storage, P-Channel 30V 2A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSII
View
BSL207SPH6327XTSA1
Infineon Technologies, P-Channel 20V 6A (Ta) 2W (Ta) Surface Mount PG-TSOP-6-6, OptiMOS™
View
SI7615CDN-T1-GE3
Vishay Siliconix, P-Channel 20V 35A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET® Gen III
View
SSM6J801R,LF
Toshiba Semiconductor and Storage, P-Channel 20V 6A (Ta) 1.5W (Ta) Surface Mount 6-TSOP-F, U-MOSVI
View
RSR020P05TL
Rohm Semiconductor, P-Channel 45V 2A (Ta) 540mW (Ta) Surface Mount TSMT3,
View
SIA477EDJ-T1-GE3
Vishay Siliconix, P-Channel 12V 12A (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®
View
SIS435DNT-T1-GE3 - Tags