Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS606BDN-T1-GE3

SIS606BDN-T1-GE3

SIS606BDN-T1-GE3

Part NumberSIS606BDN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 100V POWERPAK 1212

DatasheetSIS606BDN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 9.4A (Ta), 35.3A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS606BDN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS606BDN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS606BDN-T1-GE3.
We are offering SIS606BDN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS606BDN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS606BDN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	9.4A (Ta), 35.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	17.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1470pF @ 50V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS606BDN-T1-GE3 - Related Products

	IRLB3813PBF	Infineon Technologies, N-Channel 30V 260A (Tc) 230W (Tc) Through Hole TO-220AB, HEXFET®	View
	SI7820DN-T1-E3	Vishay Siliconix, N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	SIR626LDP-T1-RE3	Vishay Siliconix, N-Channel 60V 45.6A (Ta), 186A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	RHU003N03FRAT106	Rohm Semiconductor, N-Channel 30V 300mA (Ta) 200mW Surface Mount UMT3, Automotive, AEC-Q101	View
	IRFP150MPBF	Infineon Technologies, N-Channel 100V 42A (Tc) 160W (Tc) Through Hole TO-247AC, HEXFET®	View
	IXFN210N30X3	IXYS, N-Channel 300V 210A (Tc) 695W (Tc) Chassis Mount SOT-227B, HiPerFET™	View
	RCJ220N25TL	Rohm Semiconductor, N-Channel 250V 22A (Tc) 1.56W (Ta), 40W (Tc) Surface Mount LPTS (SC-83),	View
	STW28N60DM2	STMicroelectronics, N-Channel 600V 21A (Tc) 170W (Tc) Through Hole TO-247, MDmesh™ DM2	View
	FDPF085N10A	ON Semiconductor, N-Channel 100V 40A (Tc) 33.3W (Tc) Through Hole TO-220F, PowerTrench®	View
	TK12A50E,S5X	Toshiba Semiconductor and Storage, N-Channel 500V 12A (Ta) 45W (Tc) Through Hole TO-220SIS,	View
	DMN33D8LT-13	Diodes Incorporated, N-Channel 30V 115mA (Ta) 240mW (Ta) Surface Mount SOT-523,	View
	CSD17318Q2T	Texas Instruments, N-Channel 30V 25A (Tc) 16W (Tc) Surface Mount 6-WSON (2x2), NexFET™	View

SIS606BDN-T1-GE3 - Tags

SIS606BDN-T1-GE3 SIS606BDN-T1-GE3 PDF SIS606BDN-T1-GE3 datasheet SIS606BDN-T1-GE3 specification SIS606BDN-T1-GE3 image SIS606BDN-T1-GE3 India Renesas Electronics India SIS606BDN-T1-GE3 buy SIS606BDN-T1-GE3 SIS606BDN-T1-GE3 price SIS606BDN-T1-GE3 distributor SIS606BDN-T1-GE3 supplier SIS606BDN-T1-GE3 wholesales