Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS890DN-T1-GE3

SIS890DN-T1-GE3

SIS890DN-T1-GE3

Part NumberSIS890DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 30A 1212-8

DatasheetSIS890DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS890DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS890DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS890DN-T1-GE3.
We are offering SIS890DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS890DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS890DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	23.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	802pF @ 50V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS890DN-T1-GE3 - Related Products

	BUK9214-30A,118	Nexperia USA Inc., N-Channel 30V 63A (Tc) 107W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	VN3205N8-G	Microchip Technology, N-Channel 50V 1.5A (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),	View
	IXFX120N30P3	IXYS, N-Channel 300V 120A (Tc) 1130W (Tc) Through Hole PLUS247™-3, HiPerFET™, Polar3™	View
	IPD26N06S2L35ATMA2	Infineon Technologies, N-Channel 55V 30A (Tc) 68W (Tc) Surface Mount PG-TO252-3-11, OptiMOS™	View
	DMG2302UK-7	Diodes Incorporated, N-Channel 20V 2.8A (Ta) 660mW (Ta) Surface Mount SOT-23, Automotive, AEC-Q101	View
	TK7S10N1Z,LQ	Toshiba Semiconductor and Storage, N-Channel 100V 7A (Ta) 50W (Tc) Surface Mount DPAK+, U-MOSVIII-H	View
	AOTF20S60L	Alpha & Omega Semiconductor Inc., N-Channel 600V 20A (Tc) 37.8W (Tc) Through Hole TO-220-3F, aMOS™	View
	FCP125N65S3R0	ON Semiconductor, N-Channel 650V 24A (Tc) 181W (Tc) Through Hole TO-220-3, SuperFET® III	View
	IXTH80N65X2	IXYS, N-Channel 650V 80A (Tc) 890W (Tc) Through Hole TO-247,	View
	IRLMS1902TRPBF	Infineon Technologies, N-Channel 20V 3.2A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®	View
	BUK72150-55A,118	Nexperia USA Inc., N-Channel 55V 11A (Tc) 36W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	BSP716NH6327XTSA1	Infineon Technologies, N-Channel 75V 2.3A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, OptiMOS™	View

SIS890DN-T1-GE3 - Tags

SIS890DN-T1-GE3 SIS890DN-T1-GE3 PDF SIS890DN-T1-GE3 datasheet SIS890DN-T1-GE3 specification SIS890DN-T1-GE3 image SIS890DN-T1-GE3 India Renesas Electronics India SIS890DN-T1-GE3 buy SIS890DN-T1-GE3 SIS890DN-T1-GE3 price SIS890DN-T1-GE3 distributor SIS890DN-T1-GE3 supplier SIS890DN-T1-GE3 wholesales