Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISH402DN-T1-GE3

SISH402DN-T1-GE3

SISH402DN-T1-GE3

Part NumberSISH402DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 30V POWERPAK 1212-

DatasheetSISH402DN

Package / CasePowerPAK® 1212-8SH

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 19A (Ta), 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

To learn about the specification of SISH402DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISH402DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISH402DN-T1-GE3.
We are offering SISH402DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISH402DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISH402DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	19A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6mOhm @ 19A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1700pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8SH
Package / Case	PowerPAK® 1212-8SH

SISH402DN-T1-GE3 - Related Products

	SI7322DN-T1-E3	Vishay Siliconix, N-Channel 100V 18A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	IXTP150N15X4	IXYS, N-Channel 150V 150A (Tc) 480W (Tc) Through Hole TO-220,	View
	FDMS86202ET120	ON Semiconductor, N-Channel 120V 13.5A (Ta), 102A (Tc) 3.3W (Ta), 187W (Tc) Surface Mount Power56, PowerTrench®	View
	TK90S06N1L,LQ	Toshiba Semiconductor and Storage, N-Channel 60V 90A (Ta) 157W (Tc) Surface Mount TO-252-3, U-MOSVIII-H	View
	DMN6068LK3-13	Diodes Incorporated, N-Channel 60V 6A (Ta) 2.12W (Ta) Surface Mount TO-252-3,	View
	IXTK90N25L2	IXYS, N-Channel 250V 90A (Tc) 960W (Tc) Through Hole TO-264 (IXTK), Linear L2™	View
	SIB456DK-T1-GE3	Vishay Siliconix, N-Channel 100V 6.3A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6L Single, TrenchFET®	View
	SI7868ADP-T1-E3	Vishay Siliconix, N-Channel 20V 40A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	PSMN020-30MLCX	Nexperia USA Inc., N-Channel 30V 31.8A (Tc) 33W (Tc) Surface Mount LFPAK33,	View
	FCB11N60TM	ON Semiconductor, N-Channel 600V 11A (Tc) 125W (Tc) Surface Mount D²PAK, SuperFET™	View
	CSD17382F4T	Texas Instruments, N-Channel 30V 2.3A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™	View
	2N7002	ON Semiconductor, N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount SOT-23 (TO-236AB),	View

SISH402DN-T1-GE3 - Tags

SISH402DN-T1-GE3 SISH402DN-T1-GE3 PDF SISH402DN-T1-GE3 datasheet SISH402DN-T1-GE3 specification SISH402DN-T1-GE3 image SISH402DN-T1-GE3 India Renesas Electronics India SISH402DN-T1-GE3 buy SISH402DN-T1-GE3 SISH402DN-T1-GE3 price SISH402DN-T1-GE3 distributor SISH402DN-T1-GE3 supplier SISH402DN-T1-GE3 wholesales