TSM4ND65CI
TSM4ND65CI
Part Number TSM4ND65CI Description 650V 4A SINGLE N-CHANNEL POWER M Package / Case TO-220-3 Full Pack, Isolated TabUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 4A (Tc) 41.6W (Tc) Through Hole ITO-220
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TSM4ND65CI - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TSM4ND65CI Standard Package 50 Manufacturer Taiwan Semiconductor Corporation Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.6Ohm @ 1.2A, 10V Vgs(th) (Max) @ Id 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 16.8nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 596pF @ 50V FET Feature - Power Dissipation (Max) 41.6W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ITO-220 Package / Case TO-220-3 Full Pack, Isolated Tab
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