Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS890DN-T1-GE3

SIS890DN-T1-GE3

SIS890DN-T1-GE3

Part NumberSIS890DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 30A 1212-8

DatasheetSIS890DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS890DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS890DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS890DN-T1-GE3.
We are offering SIS890DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS890DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS890DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	23.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	802pF @ 50V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS890DN-T1-GE3 - Related Products

	STB6NK90ZT4	STMicroelectronics, N-Channel 900V 5.8A (Tc) 140W (Tc) Surface Mount D2PAK, SuperMESH™	View
	IXFA4N100Q	IXYS, N-Channel 1000V 4A (Tc) 150W (Tc) Surface Mount TO-263 (IXFA), HiPerFET™	View
	RCX081N20	Rohm Semiconductor, N-Channel 200V 8A (Tc) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM,	View
	NVTFS5C673NLTAG	ON Semiconductor, N-Channel 60V 13A (Ta), 50A (Tc) 3.1W (Ta), 46W (Tc) Surface Mount 8-WDFN (3.3x3.3), Automotive, AEC-Q101	View
	SI4114DY-T1-GE3	Vishay Siliconix, N-Channel 20V 20A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®	View
	IRF7855TRPBF	Infineon Technologies, N-Channel 60V 12A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	PSMN017-60YS,115	Nexperia USA Inc., N-Channel 60V 44A (Tc) 74W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	PSMN2R2-30YLC,115	Nexperia USA Inc., N-Channel 30V 100A (Tc) 141W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	SQ4840EY-T1_GE3	Vishay Siliconix, N-Channel 40V 20.7A (Tc) 7.1W (Tc) Surface Mount 8-SO, TrenchFET®	View
	RCJ081N20TL	Rohm Semiconductor, N-Channel 200V 8A (Tc) 1.56W (Ta), 40W (Tc) Surface Mount LPTS (SC-83),	View
	DMN6069SE-13	Diodes Incorporated, N-Channel 60V 4.3A (Ta), 10A (Tc) 2.2W (Ta) Surface Mount SOT-223, Automotive, AEC-Q101	View
	IXFK120N20	IXYS, N-Channel 200V 120A (Tc) 560W (Tc) Through Hole TO-264AA (IXFK), HiPerFET™	View

SIS890DN-T1-GE3 - Tags

SIS890DN-T1-GE3 SIS890DN-T1-GE3 PDF SIS890DN-T1-GE3 datasheet SIS890DN-T1-GE3 specification SIS890DN-T1-GE3 image SIS890DN-T1-GE3 India Renesas Electronics India SIS890DN-T1-GE3 buy SIS890DN-T1-GE3 SIS890DN-T1-GE3 price SIS890DN-T1-GE3 distributor SIS890DN-T1-GE3 supplier SIS890DN-T1-GE3 wholesales