Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS892DN-T1-GE3

SIS892DN-T1-GE3

SIS892DN-T1-GE3

Part NumberSIS892DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 30A 1212-8 PPAK

DatasheetSIS892DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS892DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS892DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS892DN-T1-GE3.
We are offering SIS892DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS892DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS892DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	29mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	611pF @ 50V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS892DN-T1-GE3 - Related Products

	FDMS86104	ON Semiconductor, N-Channel 100V 7A (Ta), 16A (Tc) 2.5W (Ta), 73W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	IXKK85N60C	IXYS, N-Channel 600V 85A (Tc) Through Hole TO-264A, CoolMOS™	View
	IPC70N04S54R6ATMA1	Infineon Technologies, N-Channel 40V 70A (Tc) 50W (Tc) Surface Mount PG-TDSON-8-34, Automotive, AEC-Q101, OptiMOS™	View
	R6025FNZ1C9	Rohm Semiconductor, N-Channel 600V 25A (Tc) 150W (Tc) Through Hole TO-247,	View
	IRLR3114ZTRPBF	Infineon Technologies, N-Channel 40V 42A (Tc) 140W (Tc) Surface Mount D-Pak, HEXFET®	View
	FDP023N08B-F102	ON Semiconductor, N-Channel 75V 120A (Tc) 245W (Tc) Through Hole TO-220-3, PowerTrench®	View
	IPT60R050G7XTMA1	Infineon Technologies, N-Channel 650V 44A (Tc) 245W (Tc) Surface Mount PG-HSOF-8-2, CoolMOS™ G7	View
	MCQ12N06-TP	Micro Commercial Co, N-Channel 60V 12A 3.1W Surface Mount 8-SOP,	View
	IRF6636TRPBF	Infineon Technologies, N-Channel 20V 18A (Ta), 81A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST, HEXFET®	View
	SI3464DV-T1-GE3	Vishay Siliconix, N-Channel 20V 8A (Tc) 2W (Ta), 3.6W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	BSR802NL6327HTSA1	Infineon Technologies, N-Channel 20V 3.7A (Ta) 500mW (Ta) Surface Mount PG-SC-59, OptiMOS™	View
	SSM3K329R,LF	Toshiba Semiconductor and Storage, N-Channel 30V 3.5A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSIII	View

SIS892DN-T1-GE3 - Tags

SIS892DN-T1-GE3 SIS892DN-T1-GE3 PDF SIS892DN-T1-GE3 datasheet SIS892DN-T1-GE3 specification SIS892DN-T1-GE3 image SIS892DN-T1-GE3 India Renesas Electronics India SIS892DN-T1-GE3 buy SIS892DN-T1-GE3 SIS892DN-T1-GE3 price SIS892DN-T1-GE3 distributor SIS892DN-T1-GE3 supplier SIS892DN-T1-GE3 wholesales