SIS932EDN-T1-GE3


SIS932EDN-T1-GE3

Part NumberSIS932EDN-T1-GE3

Manufacturer

Description

Datasheet

Package / CasePowerPAK® 1212-8 Dual

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SIS932EDN-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingCut Tape (CT)
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Rds On (Max) @ Id, Vgs22mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 15V
Power - Max2.6W (Ta), 23W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® 1212-8 Dual
Supplier Device PackagePowerPAK® 1212-8 Dual

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SIS932EDN-T1-GE3 - Tags

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