Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISA12ADN-T1-GE3

SISA12ADN-T1-GE3

SISA12ADN-T1-GE3

Part NumberSISA12ADN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 25A 1212-8

DatasheetSISA12ADN-T1-GE3

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 25A (Tc) 3.5W (Ta), 28W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SISA12ADN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISA12ADN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISA12ADN-T1-GE3.
We are offering SISA12ADN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISA12ADN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISA12ADN-T1-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	2070pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 28W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SISA12ADN-T1-GE3 - Related Products

	TK20V60W5,LVQ	Toshiba Semiconductor and Storage, N-Channel 600V 20A (Ta) 156W (Tc) Surface Mount 4-DFN-EP (8x8), DTMOSIV	View
	IPD80R450P7ATMA1	Infineon Technologies, N-Channel 800V 11A (Tc) 73W (Tc) Surface Mount TO-252, CoolMOS™	View
	ZXMN20B28KTC	Diodes Incorporated, N-Channel 200V 1.5A (Ta) 2.2W (Ta) Surface Mount TO-252-3,	View
	PSMN6R0-30YL,115	Nexperia USA Inc., N-Channel 30V 79A (Tc) 55W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	FQU13N06LTU	ON Semiconductor, N-Channel 60V 11A (Tc) 2.5W (Ta), 28W (Tc) Through Hole I-PAK, QFET®	View
	IRFS4321TRLPBF	Infineon Technologies, N-Channel 150V 85A (Tc) 350W (Tc) Surface Mount D2PAK, HEXFET®	View
	IXFN80N50Q3	IXYS, N-Channel 500V 63A (Tc) 780W (Tc) Chassis Mount SOT-227B, HiPerFET™	View
	STL11N65M2	STMicroelectronics, N-Channel 650V 7A (Tc) 85W (Tc) Surface Mount,	View
	IPW60R045CPFKSA1	Infineon Technologies, N-Channel 650V 60A (Tc) 431W (Tc) Through Hole PG-TO247-3, CoolMOS™	View
	STB120N4LF6	STMicroelectronics, N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, DeepGATE™, STripFET™ VI	View
	NTMFS4C025NT1G	ON Semiconductor, N-Channel 30V 20A (Ta), 69A (Tc) 2.55W (Ta), 30.5W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	IRFB31N20DPBF	Infineon Technologies, N-Channel 200V 31A (Tc) 3.1W (Ta), 200W (Tc) Through Hole TO-220AB, HEXFET®	View

SISA12ADN-T1-GE3 - Tags

SISA12ADN-T1-GE3 SISA12ADN-T1-GE3 PDF SISA12ADN-T1-GE3 datasheet SISA12ADN-T1-GE3 specification SISA12ADN-T1-GE3 image SISA12ADN-T1-GE3 India Renesas Electronics India SISA12ADN-T1-GE3 buy SISA12ADN-T1-GE3 SISA12ADN-T1-GE3 price SISA12ADN-T1-GE3 distributor SISA12ADN-T1-GE3 supplier SISA12ADN-T1-GE3 wholesales