SISA18ADN-T1-GE3

Part NumberSISA18ADN-T1-GE3

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISA18ADN-T1-GE3
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	38.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21.5nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	1000pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.2W (Ta), 19.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

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2N7002-T1-GE3	Vishay Siliconix, N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236,	View
FDMS7556S	ON Semiconductor, N-Channel 25V 35A (Ta), 49A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™	View
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SQJA60EP-T1_GE3	Vishay Siliconix, N-Channel 60V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
STD5N80K5	STMicroelectronics, N-Channel 800V 4A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™	View
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BUK7675-100A,118	Nexperia USA Inc., N-Channel 100V 23A (Tc) 99W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View