Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISC06DN-T1-GE3

SISC06DN-T1-GE3

SISC06DN-T1-GE3

Part NumberSISC06DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V

DatasheetSISC06DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 27.6A (Ta), 40A (Tc) 3.7W (Ta), 46.3W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SISC06DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISC06DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISC06DN-T1-GE3.
We are offering SISC06DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISC06DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISC06DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	27.6A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	2455pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 46.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SISC06DN-T1-GE3 - Related Products

	SI3404-TP	Micro Commercial Co, N-Channel 30V 5.8A 350mW Surface Mount SOT-23,	View
	STW77N65M5	STMicroelectronics, N-Channel 650V 69A (Tc) 400W (Tc) Through Hole TO-247-3, MDmesh™ V	View
	RCJ330N25TL	Rohm Semiconductor, N-Channel 250V 33A (Tc) 1.56W (Ta), 40W (Tc) Surface Mount LPTS,	View
	DMNH4006SPSQ-13	Diodes Incorporated, N-Channel 40V 110A (Tc) 1.6W (Ta) Surface Mount PowerDI5060-8, Automotive, AEC-Q101	View
	CSD18513Q5A	Texas Instruments, N-Channel 40V 124A (Tc) 96W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	PSMN013-30MLC,115	Nexperia USA Inc., N-Channel 30V 39A (Tc) 38W (Tc) Surface Mount LFPAK33,	View
	IRF3710ZSTRLPBF	Infineon Technologies, N-Channel 100V 59A (Tc) 160W (Tc) Surface Mount D2PAK, HEXFET®	View
	SIHB120N60E-GE3	Vishay Siliconix, N-Channel 600V 25A (Tc) 179W (Tc) Surface Mount D²PAK (TO-263),	View
	BSP296NH6327XTSA1	Infineon Technologies, N-Channel 100V 1.2A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, OptiMOS™	View
	IRF3205STRLPBF	Infineon Technologies, N-Channel 55V 110A (Tc) 200W (Tc) Surface Mount D2PAK, HEXFET®	View
	FDMS007N08LC	ON Semiconductor, N-Channel 80V 14A (Ta), 84A (Tc) 2.5W (Ta), 92.6W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	SSM6K504NU,LF	Toshiba Semiconductor and Storage, N-Channel 30V 9A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVII	View

SISC06DN-T1-GE3 - Tags

SISC06DN-T1-GE3 SISC06DN-T1-GE3 PDF SISC06DN-T1-GE3 datasheet SISC06DN-T1-GE3 specification SISC06DN-T1-GE3 image SISC06DN-T1-GE3 India Renesas Electronics India SISC06DN-T1-GE3 buy SISC06DN-T1-GE3 SISC06DN-T1-GE3 price SISC06DN-T1-GE3 distributor SISC06DN-T1-GE3 supplier SISC06DN-T1-GE3 wholesales