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SISH106DN-T1-GE3

SISH106DN-T1-GE3

Part NumberSISH106DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN PPAK 1212-8SH

DatasheetSISH106DN

Package / CasePowerPAK® 1212-8SH

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH

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SISH106DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISH106DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	6.2mOhm @ 19.5A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	27nC @ 4.5V
Vgs (Max)	±12V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8SH
Package / Case	PowerPAK® 1212-8SH

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