SISH108DN-T1-GE3
SISH108DN-T1-GE3
Part Number SISH108DN-T1-GE3 Description MOSFET N-CHAN 20 V POWERPAK 1212 Package / Case PowerPAK® 1212-8SHUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 20V 14A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH
To learn about the specification of SISH108DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISH108DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISH108DN-T1-GE3.
We are offering SISH108DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SISH108DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SiSH108DN Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Gen II Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 14A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.9mOhm @ 22A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V Vgs (Max) ±16V FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8SH Package / Case PowerPAK® 1212-8SH
SISH108DN-T1-GE3 - Related ProductsMore >>
FQT4N20LTF ON Semiconductor, N-Channel 200V 850mA (Tc) 2.2W (Tc) Surface Mount SOT-223-4, QFET®
View
AON2260 Alpha & Omega Semiconductor Inc., N-Channel 60V 6A (Ta) 2.8W (Ta) Surface Mount 6-DFN-EP (2x2),
View
SIJA58DP-T1-GE3 Vishay Siliconix, N-Channel 40V 60A (Tc) 27.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
View
FDV301N ON Semiconductor, N-Channel 25V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23,
View
FQP13N10L ON Semiconductor, N-Channel 100V 12.8A (Tc) 65W (Tc) Through Hole TO-220-3, QFET®
View
NX138AKR Nexperia USA Inc., N-Channel 60V 190mA (Ta) 325mW (Ta) Surface Mount TO-236AB,
View
IRLZ24NSTRLPBF Infineon Technologies, N-Channel 55V 18A (Tc) 3.8W (Ta), 45W (Tc) Surface Mount D2PAK, HEXFET®
View
TPW4R008NH,L1Q Toshiba Semiconductor and Storage, N-Channel 80V 116A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance, U-MOSVIII-H
View
NTD6416ANLT4G ON Semiconductor, N-Channel 100V 19A (Tc) 71W (Tc) Surface Mount DPAK,
View
IRF7807VTRPBF Infineon Technologies, N-Channel 30V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
IRFS4227TRLPBF Infineon Technologies, N-Channel 200V 62A (Tc) 330W (Tc) Surface Mount D2PAK, HEXFET®
View
IXFX360N15T2 IXYS, N-Channel 150V 360A (Tc) 1670W (Tc) Through Hole PLUS247™-3, GigaMOS™
View
SISH108DN-T1-GE3 - Tags
English
