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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK7610-100B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6773pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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FCD600N60Z
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STB45N60DM2AG
STMicroelectronics, N-Channel 600V 34A (Tc) 250W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, MDmesh™ DM2
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SIR140DP-T1-RE3
Vishay Siliconix, N-Channel 25V 71.9A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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BSC110N06NS3GATMA1
Infineon Technologies, N-Channel 60V 50A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™
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IRF644STRLPBF
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FDI150N10
ON Semiconductor, N-Channel 100V 57A (Tc) 110W (Tc) Through Hole I2PAK (TO-262), PowerTrench®
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DN2535N3-G
Microchip Technology, N-Channel 350V 120mA (Tj) 1W (Tc) Through Hole TO-92 (TO-226),
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FDG311N
ON Semiconductor, N-Channel 20V 1.9A (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6), PowerTrench®
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SI4166DY-T1-GE3
Vishay Siliconix, N-Channel 30V 30.5A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SO, TrenchFET®
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FDMC2512SDC
ON Semiconductor, N-Channel 25V 32A (Ta), 40A (Tc) 3W (Ta), 66W (Tc) Surface Mount Dual Cool ™ 33, Dual Cool™, PowerTrench®, SyncFET™
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PSMN2R2-30YLC,115
Nexperia USA Inc., N-Channel 30V 100A (Tc) 141W (Tc) Surface Mount LFPAK56, Power-SO8,
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