SISH110DN-T1-GE3
SISH110DN-T1-GE3
Part Number SISH110DN-T1-GE3 Description MOSFET N-CH 20V PPAK 1212-8SH Package / Case PowerPAK® 1212-8SHUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 20V 13.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH
To learn about the specification of SISH110DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISH110DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISH110DN-T1-GE3.
We are offering SISH110DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SISH110DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SISH110DN Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Gen II Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 13.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.3mOhm @ 21.1A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8SH Package / Case PowerPAK® 1212-8SH
SISH110DN-T1-GE3 - Related ProductsMore >>
IXFX230N20T IXYS, N-Channel 200V 230A (Tc) 1670W (Tc) Through Hole PLUS247™-3, GigaMOS™
View
IRFR1N60APBF Vishay Siliconix, N-Channel 600V 1.4A (Tc) 36W (Tc) Surface Mount D-Pak,
View
FDS8817NZ ON Semiconductor, N-Channel 30V 15A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
STB13NK60ZT4 STMicroelectronics, N-Channel 600V 13A (Tc) 150W (Tc) Surface Mount D2PAK, SuperMESH™
View
BSS214NWH6327XTSA1 Infineon Technologies, N-Channel 20V 1.5A (Ta) 500mW (Ta) Surface Mount PG-SOT323-3, OptiMOS™
View
IPI90N04S402AKSA1 Infineon Technologies, N-Channel 40V 90A (Tc) 150W (Tc) Through Hole PG-TO262-3, OptiMOS™
View
BSC097N06NSATMA1 Infineon Technologies, N-Channel 60V 46A (Tc) 2.5W (Ta), 36W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™
View
TK62N60X,S1F Toshiba Semiconductor and Storage, N-Channel 600V 61.8A (Ta) 400W (Tc) Through Hole TO-247, DTMOSIV-H
View
SI7858ADP-T1-GE3 Vishay Siliconix, N-Channel 12V 20A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
SQ2310ES-T1_GE3 Vishay Siliconix, N-Channel 20V 6A (Tc) 2W (Tc) Surface Mount TO-236, TrenchFET®
View
VN2460N3-G Microchip Technology, N-Channel 600V 160mA (Tj) 1W (Ta) Through Hole TO-92-3,
View
BSZ900N20NS3GATMA1 Infineon Technologies, N-Channel 200V 15.2A (Tc) 62.5W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™
View
SISH110DN-T1-GE3 - Tags
English
