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SISS08DN-T1-GE3

SISS08DN-T1-GE3

Part NumberSISS08DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 25 V POWERPAK 1212

DatasheetSISS08DN

Package / CasePowerPAK® 1212-8S

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 53.9A (Ta), 195.5A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

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SISS08DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISS08DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	53.9A (Ta), 195.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.23mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	82nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	3670pF @ 12.5V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 65.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

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