SISS08DN-T1-GE3
SISS08DN-T1-GE3
Part Number SISS08DN-T1-GE3 Description MOSFET N-CHAN 25 V POWERPAK 1212 Package / Case PowerPAK® 1212-8SUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 25V 53.9A (Ta), 195.5A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
To learn about the specification of SISS08DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS08DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS08DN-T1-GE3.
We are offering SISS08DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SISS08DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SISS08DN Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Gen IV Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 53.9A (Ta), 195.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.23mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 3670pF @ 12.5V FET Feature - Power Dissipation (Max) 5W (Ta), 65.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8S (3.3x3.3) Package / Case PowerPAK® 1212-8S
SISS08DN-T1-GE3 - Related ProductsMore >>
BSP149H6906XTSA1 Infineon Technologies, N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
View
BSS138NH6327XTSA2 Infineon Technologies, N-Channel 60V 230mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, SIPMOS®
View
RF4E080BNTR Rohm Semiconductor, N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount HUML2020L8,
View
FDS6699S ON Semiconductor, N-Channel 30V 21A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®, SyncFET™
View
IPA60R460CEXKSA1 Infineon Technologies, N-Channel 600V 9.1A (Tc) 30W (Tc) Through Hole PG-TO220-FP, CoolMOS™ CE
View
FQD19N10LTM ON Semiconductor, N-Channel 100V 15.6A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount D-Pak, QFET®
View
TK25A60X5,S5X Toshiba Semiconductor and Storage, N-Channel 600V 25A (Ta) 45W (Tc) Through Hole TO-220SIS, DTMOSIV-H
View
SPB20N60C3ATMA1 Infineon Technologies, N-Channel 650V 20.7A (Tc) 208W (Tc) Surface Mount PG-TO263-3-2, CoolMOS™
View
ZXMN6A08E6TA Diodes Incorporated, N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26,
View
FDD8782 ON Semiconductor, N-Channel 25V 35A (Tc) 50W (Tc) Surface Mount TO-252AA, PowerTrench®
View
NVHL072N65S3 ON Semiconductor, N-Channel 650V 44A (Tc) 312W (Tc) Through Hole TO-247-3,
View
FDP120N10 ON Semiconductor, N-Channel 100V 74A (Tc) 170W (Tc) Through Hole TO-220-3, PowerTrench®
View
SISS08DN-T1-GE3 - Tags
English
