SISS10ADN-T1-GE3


SISS10ADN-T1-GE3

Part NumberSISS10ADN-T1-GE3

Manufacturer

Description

Datasheet

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SISS10ADN-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C31.7A (Ta), 109A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs61nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds3030pF @ 20V
FET Feature-
Power Dissipation (Max)4.8W (Ta), 56.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8S (3.3x3.3)
Package / CasePowerPAK® 1212-8S

SISS10ADN-T1-GE3 - Related Products

More >>
RFD14N05L ON Semiconductor, N-Channel 50V 14A (Tc) 48W (Tc) Through Hole I-PAK, View
NDS7002A ON Semiconductor, N-Channel 60V 280mA (Ta) 300mW (Ta) Surface Mount SOT-23 (TO-236AB), View
IXFQ22N60P3 IXYS, N-Channel 600V 22A (Tc) 500W (Tc) Through Hole TO-3P, HiPerFET™, Polar3™ View
IRFSL3006PBF Infineon Technologies, N-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-262, HEXFET® View
TSM4NB60CH C5G Taiwan Semiconductor Corporation, N-Channel 600V 4A 50W (Tc) Through Hole TO-251 (IPAK), View
TN2640K4-G Microchip Technology, N-Channel 400V 500mA (Tj) 2.5W (Ta) Surface Mount TO-252, (D-Pak), View
STP105N3LL STMicroelectronics, N-Channel 30V 80A (Tc) 140W (Tc) Through Hole TO-220, DeepGATE™, STripFET™ VI View
CSD13383F4T Texas Instruments, N-Channel 12V 2.9A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™ View
IRF6646TRPBF Infineon Technologies, N-Channel 80V 12A (Ta), 68A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN, HEXFET® View
NTMFS6B03NT1G ON Semiconductor, N-Channel 100V 19A (Ta), 132A (Tc) 3.4W (Ta), 165W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), View
TSM7ND65CI Taiwan Semiconductor Corporation, N-Channel 650V 7A (Tc) 50W (Tc) Through Hole ITO-220, View
IPD60R2K1CEAUMA1 Infineon Technologies, N-Channel 600V 2.3A (Tc) 38W (Tc) Surface Mount PG-TO252-3, CoolMOS™ CE View

SISS10ADN-T1-GE3 - Tags

SISS10ADN-T1-GE3 SISS10ADN-T1-GE3 PDF SISS10ADN-T1-GE3 datasheet SISS10ADN-T1-GE3 specification SISS10ADN-T1-GE3 image SISS10ADN-T1-GE3 India Renesas Electronics India SISS10ADN-T1-GE3 buy SISS10ADN-T1-GE3 SISS10ADN-T1-GE3 price SISS10ADN-T1-GE3 distributor SISS10ADN-T1-GE3 supplier SISS10ADN-T1-GE3 wholesales