Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISS10ADN-T1-GE3

SISS10ADN-T1-GE3

SISS10ADN-T1-GE3

Part NumberSISS10ADN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 40 V POWERPAK 1212

DatasheetSiSS10ADN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 31.7A (Ta), 109A (Tc) 4.8W (Ta), 56.8W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SISS10ADN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS10ADN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS10ADN-T1-GE3.
We are offering SISS10ADN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISS10ADN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiSS10ADN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	31.7A (Ta), 109A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	61nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	3030pF @ 20V
FET Feature	-
Power Dissipation (Max)	4.8W (Ta), 56.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SISS10ADN-T1-GE3 - Related Products

	SI4840BDY-T1-GE3	Vishay Siliconix, N-Channel 40V 19A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SO, TrenchFET®	View
	SSM3K62TU,LF	Toshiba Semiconductor and Storage, N-Channel 20V 800mA (Ta) 1W (Ta) Surface Mount UFM, U-MOSVII-H	View
	IRL3803VPBF	Infineon Technologies, N-Channel 30V 140A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®	View
	BUK9Y25-80E,115	Nexperia USA Inc., N-Channel 80V 37A (Tc) 95W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101	View
	ZXMN10A07ZTA	Diodes Incorporated, N-Channel 100V 1A (Ta) 1.5W (Ta) Surface Mount SOT-89-3,	View
	IXFH24N50	IXYS, N-Channel 500V 24A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™	View
	TSM080N03EPQ56 RLG	Taiwan Semiconductor Corporation, N-Channel 30V 55A (Tc) 54W (Tc) Surface Mount 8-PDFN (5x6),	View
	BS870Q-7-F	Diodes Incorporated, N-Channel 60V 250mA (Ta) 300mW Surface Mount SOT-23, Automotive, AEC-Q101	View
	DMN3150LW-7	Diodes Incorporated, N-Channel 28V 1.6A (Ta) 350mW (Ta) Surface Mount SOT-323,	View
	FDMA410NZT	ON Semiconductor, N-Channel 20V 9.5A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2),	View
	FCD5N60TM-WS	ON Semiconductor, N-Channel 600V 4.6A (Tc) 54W (Tc) Surface Mount D-Pak, SuperFET™	View
	RHP020N06T100	Rohm Semiconductor, N-Channel 60V 2A (Ta) 500mW (Ta) Surface Mount MPT3,	View

SISS10ADN-T1-GE3 - Tags

SISS10ADN-T1-GE3 SISS10ADN-T1-GE3 PDF SISS10ADN-T1-GE3 datasheet SISS10ADN-T1-GE3 specification SISS10ADN-T1-GE3 image SISS10ADN-T1-GE3 India Renesas Electronics India SISS10ADN-T1-GE3 buy SISS10ADN-T1-GE3 SISS10ADN-T1-GE3 price SISS10ADN-T1-GE3 distributor SISS10ADN-T1-GE3 supplier SISS10ADN-T1-GE3 wholesales