Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISS12DN-T1-GE3

SISS12DN-T1-GE3

SISS12DN-T1-GE3

Part NumberSISS12DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 40V POWERPAK 1212-

DatasheetSISS12DN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 37.5A (Ta), 60A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SISS12DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS12DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS12DN-T1-GE3.
We are offering SISS12DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISS12DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISS12DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	37.5A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.98mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	89nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	4270pF @ 20V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 65.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SISS12DN-T1-GE3 - Related Products

	IXTP110N12T2	IXYS, N-Channel 120V 110A (Tc) 517W (Tc) Through Hole TO-220AB, TrenchT2™	View
	PSMN2R0-25YLDX	Nexperia USA Inc., N-Channel 25V 100A (Tc) 115W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	IRFB3607PBF	Infineon Technologies, N-Channel 75V 80A (Tc) 140W (Tc) Through Hole TO-220AB, HEXFET®	View
	R6024ENX	Rohm Semiconductor, N-Channel 600V 24A (Tc) 40W (Tc) Through Hole TO-220FM,	View
	BUK9214-30A,118	Nexperia USA Inc., N-Channel 30V 63A (Tc) 107W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	FDD3670	ON Semiconductor, N-Channel 100V 34A (Ta) 3.8W (Ta), 83W (Tc) Surface Mount TO-252, PowerTrench®	View
	CEDM7001VL TR	Central Semiconductor Corp, N-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount SOT-883VL,	View
	DMN10H170SVTQ-7	Diodes Incorporated, N-Channel 100V 2.6A (Ta) 1.2W (Ta) Surface Mount TSOT-26,	View
	PMCM6501UNEZ	Nexperia USA Inc., N-Channel 20V 400mW Surface Mount 6-WLCSP (1.48x.98),	View
	NDS355N	ON Semiconductor, N-Channel 30V 1.6A (Ta) 500mW (Ta) Surface Mount SuperSOT-3,	View
	FCD380N60E	ON Semiconductor, N-Channel 600V 10.2A (Tc) 106W (Tc) Surface Mount D-Pak, SuperFET® II	View
	CSD18536KTT	Texas Instruments, N-Channel 60V 200A (Ta) 375W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™	View

SISS12DN-T1-GE3 - Tags

SISS12DN-T1-GE3 SISS12DN-T1-GE3 PDF SISS12DN-T1-GE3 datasheet SISS12DN-T1-GE3 specification SISS12DN-T1-GE3 image SISS12DN-T1-GE3 India Renesas Electronics India SISS12DN-T1-GE3 buy SISS12DN-T1-GE3 SISS12DN-T1-GE3 price SISS12DN-T1-GE3 distributor SISS12DN-T1-GE3 supplier SISS12DN-T1-GE3 wholesales