SIZ926DT-T1-GE3

Part NumberSIZ926DT-T1-GE3

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	SIZ926DT
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	40A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs	4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19nC @ 10V, 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	925pF @ 10V, 2150pF @ 10V
Power - Max	20.2W, 40W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Supplier Device Package	8-PowerPair® (6x5)

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SIZ926DT-T1-GE3	Vishay Siliconix, Mosfet Array 2 N-Channel (Dual) 25V 40A (Tc), 60A (Tc) 20.2W, 40W Surface Mount 8-PowerPair® (6x5), TrenchFET® Gen IV	View