SMUN5211DW1T1G

Part NumberSMUN5211DW1T1G

ManufacturerON Semiconductor

DescriptionTRANS 2NPN PREBIAS 0.187W SOT363

DatasheetMUN5211DW1, NSBC114EDxx

Package / Case6-TSSOP, SC-88, SOT-363

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363

To learn about the specification of SMUN5211DW1T1G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SMUN5211DW1T1G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SMUN5211DW1T1G.
We are offering SMUN5211DW1T1G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SMUN5211DW1T1G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet	MUN5211DW1, NSBC114EDxx
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	10kOhms
Resistor - Emitter Base (R2)	10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	187mW
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-88/SC70-6/SOT-363

SMUN5211DW1T1G - Related Products

More >>

NSBC114EDP6T5G	ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 408mW Surface Mount SOT-963,	View
RN1965(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6,	View
EMG8T2R	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT5,	View
RN1910FE,LF(CT	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6,	View
DMC264050R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount Mini6-G4-B,	View
RN1903,LF(CT	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6,	View
EMG2DXV5T5G	ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 230mW Surface Mount SOT-553,	View
UMH10NTN	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6,	View
IMH5AT108	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6,	View
RN1964TE85LF	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6,	View
DMC266040R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount Mini6-G4-B,	View
DMC5640L0R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini6-F3-B,	View

SMUN5211DW1T1G - Tags

SMUN5211DW1T1G SMUN5211DW1T1G PDF SMUN5211DW1T1G datasheet SMUN5211DW1T1G specification SMUN5211DW1T1G image SMUN5211DW1T1G India Renesas Electronics India SMUN5211DW1T1G buy SMUN5211DW1T1G SMUN5211DW1T1G price SMUN5211DW1T1G distributor SMUN5211DW1T1G supplier SMUN5211DW1T1G wholesales