Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ1431EH-T1_GE3

SQ1431EH-T1_GE3

SQ1431EH-T1_GE3

Part NumberSQ1431EH-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 3A SC70

DatasheetSQ1431EH

Package / Case6-TSSOP, SC-88, SOT-363

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 3A (Tc) 3W (Tc) Surface Mount SC-70-6 (SOT-363)

To learn about the specification of SQ1431EH-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ1431EH-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ1431EH-T1_GE3.
We are offering SQ1431EH-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ1431EH-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ1431EH
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	175mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.5nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	205pF @ 25V
FET Feature	-
Power Dissipation (Max)	3W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-70-6 (SOT-363)
Package / Case	6-TSSOP, SC-88, SOT-363

SQ1431EH-T1_GE3 - Related Products

	SI4401DDY-T1-GE3	Vishay Siliconix, P-Channel 40V 16.1A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 8-SO, TrenchFET®	View
	SSM3J130TU,LF	Toshiba Semiconductor and Storage, P-Channel 20V 4.4A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI	View
	TSM650P03CX RFG	Taiwan Semiconductor Corporation, P-Channel 30V 4.1A (Tc) 1.56W (Tc) Surface Mount SOT-23,	View
	SSM3J118TU(TE85L)	Toshiba Semiconductor and Storage, P-Channel 30V 1.4A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSII	View
	FQB7P20TM	ON Semiconductor, P-Channel 200V 7.3A (Tc) 3.13W (Ta), 90W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View
	TP0610T-G	Microchip Technology, P-Channel 60V 120mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23),	View
	SI4435DYTRPBF	Infineon Technologies, P-Channel 30V 8A (Tc) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	SIA477EDJ-T1-GE3	Vishay Siliconix, P-Channel 12V 12A (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®	View
	RW1E015RPT2R	Rohm Semiconductor, P-Channel 30V 1.5A (Ta) 400mW (Ta) Surface Mount 6-WEMT,	View
	FDMS6681Z	ON Semiconductor, P-Channel 30V 21.1A (Ta), 49A (Tc) 2.5W (Ta), 73W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	US5U38TR	Rohm Semiconductor, P-Channel 20V 1A (Ta) 1W (Ta) Surface Mount TUMT5,	View
	SQJ423EP-T1_GE3	Vishay Siliconix, P-Channel 40V 55A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View

SQ1431EH-T1_GE3 - Tags

SQ1431EH-T1_GE3 SQ1431EH-T1_GE3 PDF SQ1431EH-T1_GE3 datasheet SQ1431EH-T1_GE3 specification SQ1431EH-T1_GE3 image SQ1431EH-T1_GE3 India Renesas Electronics India SQ1431EH-T1_GE3 buy SQ1431EH-T1_GE3 SQ1431EH-T1_GE3 price SQ1431EH-T1_GE3 distributor SQ1431EH-T1_GE3 supplier SQ1431EH-T1_GE3 wholesales