SQ1912AEEH-T1_GE3


SQ1912AEEH-T1_GE3

Part NumberSQ1912AEEH-T1_GE3

Manufacturer

Description

Datasheet

Package / CasePowerPAK® SC-70-6 Dual

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SQ1912AEEH-T1_GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package3000
ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
PackagingTape & Reel (TR)
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C800mA (Tc)
Rds On (Max) @ Id, Vgs280mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds27pF @ 10V
Power - Max1.5W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual

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SQ1912AEEH-T1_GE3 - Tags

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