Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2301ES-T1_GE3

SQ2301ES-T1_GE3

SQ2301ES-T1_GE3

Part NumberSQ2301ES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 3.9A TO236

DatasheetSQ2301ES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 3.9A (Tc) 3W (Tc) Surface Mount TO-236 (SOT-23)

To learn about the specification of SQ2301ES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2301ES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2301ES-T1_GE3.
We are offering SQ2301ES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2301ES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2301ES
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	120mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	425pF @ 10V
FET Feature	-
Power Dissipation (Max)	3W (Tc)
Operating Temperature	-55°C ~ 175°C (TA)
Mounting Type	Surface Mount
Supplier Device Package	TO-236 (SOT-23)
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2301ES-T1_GE3 - Related Products

	NDS332P	ON Semiconductor, P-Channel 20V 1A (Ta) 500mW (Ta) Surface Mount SuperSOT-3,	View
	SI3483CDV-T1-E3	Vishay Siliconix, P-Channel 30V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	SQJ443EP-T1_GE3	Vishay Siliconix, P-Channel 40V 40A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	RZR040P01TL	Rohm Semiconductor, P-Channel 12V 4A (Ta) 1W (Ta) Surface Mount TSMT3,	View
	IRF5803TRPBF	Infineon Technologies, P-Channel 40V 3.4A (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®	View
	FDS6375	ON Semiconductor, P-Channel 20V 8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	TSM9435CS RLG	Taiwan Semiconductor Corporation, P-Channel 30V 5.3A (Tc) 5.3W (Tc) Surface Mount 8-SOP,	View
	IRFU9020PBF	Vishay Siliconix, P-Channel 50V 9.9A (Tc) 42W (Tc) Through Hole TO-251AA,	View
	VP3203N8-G	Microchip Technology, P-Channel 30V 1.1A (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),	View
	IPD50P03P4L11ATMA1	Infineon Technologies, P-Channel 30V 50A (Tc) 58W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	CSD25402Q3A	Texas Instruments, P-Channel 20V 76A (Tc) 2.8W (Ta), 69W (Tc) Surface Mount 8-VSON (3.3x3.3), NexFET™	View
	TSM2307CX RFG	Taiwan Semiconductor Corporation, P-Channel 30V 3A (Tc) 1.25W (Ta) Surface Mount SOT-23,	View

SQ2301ES-T1_GE3 - Tags

SQ2301ES-T1_GE3 SQ2301ES-T1_GE3 PDF SQ2301ES-T1_GE3 datasheet SQ2301ES-T1_GE3 specification SQ2301ES-T1_GE3 image SQ2301ES-T1_GE3 India Renesas Electronics India SQ2301ES-T1_GE3 buy SQ2301ES-T1_GE3 SQ2301ES-T1_GE3 price SQ2301ES-T1_GE3 distributor SQ2301ES-T1_GE3 supplier SQ2301ES-T1_GE3 wholesales