Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2310ES-T1_GE3

SQ2310ES-T1_GE3

SQ2310ES-T1_GE3

Part NumberSQ2310ES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 6A SOT23

DatasheetSQ2310ES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 6A (Tc) 2W (Tc) Surface Mount TO-236

To learn about the specification of SQ2310ES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2310ES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2310ES-T1_GE3.
We are offering SQ2310ES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2310ES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2310ES
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	30mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.5nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	485pF @ 10V
FET Feature	-
Power Dissipation (Max)	2W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2310ES-T1_GE3 - Related Products

	AO4484	Alpha & Omega Semiconductor Inc., N-Channel 40V 10A (Ta) 1.7W (Ta) Surface Mount 8-SOIC,	View
	STW56N65M2	STMicroelectronics, N-Channel 650V 49A (Tc) 358W (Tc) Through Hole TO-247, MDmesh™ M2	View
	FDY302NZ	ON Semiconductor, N-Channel 20V 600mA (Ta) 625mW (Ta) Surface Mount SC-89-3, PowerTrench®	View
	CPH3457-TL-W	ON Semiconductor, N-Channel 30V 3A (Ta) 1W (Ta) Surface Mount 3-CPH,	View
	AOD3N60	Alpha & Omega Semiconductor Inc., N-Channel 600V 2.5A (Tc) 56.8W (Tc) Surface Mount TO-252, (D-Pak),	View
	IPU95R750P7AKMA1	Infineon Technologies, N-Channel 950V 9A (Tc) 73W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7	View
	RUL035N02TR	Rohm Semiconductor, N-Channel 20V 3.5A (Ta) 320mW (Ta) Surface Mount TUMT6,	View
	BSH111BKR	Nexperia USA Inc., N-Channel 55V 210mA (Ta) 302mW (Ta) Surface Mount TO-236AB,	View
	IRFS23N20DTRLP	Infineon Technologies, N-Channel 200V 24A (Tc) 3.8W (Ta), 170W (Tc) Surface Mount D2PAK, HEXFET®	View
	APT10M11JVRU3	Microsemi Corporation, N-Channel 100V 142A (Tc) 450W (Tc) Chassis Mount SOT-227,	View
	SI2312BDS-T1-E3	Vishay Siliconix, N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	SQJA90EP-T1_GE3	Vishay Siliconix, N-Channel 80V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View

SQ2310ES-T1_GE3 - Tags

SQ2310ES-T1_GE3 SQ2310ES-T1_GE3 PDF SQ2310ES-T1_GE3 datasheet SQ2310ES-T1_GE3 specification SQ2310ES-T1_GE3 image SQ2310ES-T1_GE3 India Renesas Electronics India SQ2310ES-T1_GE3 buy SQ2310ES-T1_GE3 SQ2310ES-T1_GE3 price SQ2310ES-T1_GE3 distributor SQ2310ES-T1_GE3 supplier SQ2310ES-T1_GE3 wholesales