Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2310ES-T1_GE3

SQ2310ES-T1_GE3

SQ2310ES-T1_GE3

Part NumberSQ2310ES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 6A SOT23

DatasheetSQ2310ES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 6A (Tc) 2W (Tc) Surface Mount TO-236

To learn about the specification of SQ2310ES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2310ES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2310ES-T1_GE3.
We are offering SQ2310ES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2310ES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2310ES
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	30mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.5nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	485pF @ 10V
FET Feature	-
Power Dissipation (Max)	2W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2310ES-T1_GE3 - Related Products

	IPD30N06S2L23ATMA3	Infineon Technologies, N-Channel 55V 30A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11, OptiMOS™	View
	CSD18503Q5AT	Texas Instruments, N-Channel 40V 100A (Tc) 3.1W (Ta), 120W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	IRFH3707TRPBF	Infineon Technologies, N-Channel 30V 12A (Ta), 29A (Tc) 2.8W (Ta) Surface Mount 8-PQFN (3x3), HEXFET®	View
	IRLR014TRPBF	Vishay Siliconix, N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,	View
	BUK9Y14-40B,115	Nexperia USA Inc., N-Channel 40V 56A (Tc) 85W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	PSMN015-60BS,118	Nexperia USA Inc., N-Channel 60V 50A (Tc) 86W (Tc) Surface Mount D2PAK,	View
	BUK9Y6R0-60E,115	Nexperia USA Inc., N-Channel 60V 100A (Tc) 195W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	STU4N52K3	STMicroelectronics, N-Channel 525V 2.5A (Tc) 45W (Tc) Through Hole I-PAK, SuperMESH3™	View
	STL56N3LLH5	STMicroelectronics, N-Channel 30V 56A (Tc) 62.5W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™ V	View
	NTMFS4937NT1G	ON Semiconductor, N-Channel 30V 10.2A (Ta), 70A (Tc) 920mW (Ta), 43W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	STB55NF06T4	STMicroelectronics, N-Channel 60V 50A (Tc) 110W (Tc) Surface Mount D2PAK, STripFET™ II	View
	BSC093N15NS5ATMA1	Infineon Technologies, N-Channel 150V 87A (Tc) 139W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™	View

SQ2310ES-T1_GE3 - Tags

SQ2310ES-T1_GE3 SQ2310ES-T1_GE3 PDF SQ2310ES-T1_GE3 datasheet SQ2310ES-T1_GE3 specification SQ2310ES-T1_GE3 image SQ2310ES-T1_GE3 India Renesas Electronics India SQ2310ES-T1_GE3 buy SQ2310ES-T1_GE3 SQ2310ES-T1_GE3 price SQ2310ES-T1_GE3 distributor SQ2310ES-T1_GE3 supplier SQ2310ES-T1_GE3 wholesales