Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2315ES-T1_GE3

SQ2315ES-T1_GE3

SQ2315ES-T1_GE3

Part NumberSQ2315ES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CHAN 12V SOT23

DatasheetSQ2315ES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 12V 5A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SQ2315ES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2315ES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2315ES-T1_GE3.
We are offering SQ2315ES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2315ES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2315ES
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	50mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	870pF @ 4V
FET Feature	-
Power Dissipation (Max)	2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2315ES-T1_GE3 - Related Products

	FQD4P25TM-WS	ON Semiconductor, P-Channel 250V 3.1A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount D-Pak, QFET®	View
	SI2365EDS-T1-GE3	Vishay Siliconix, P-Channel 20V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount TO-236, TrenchFET®	View
	RF4C050APTR	Rohm Semiconductor, P-Channel 20V 10A (Ta) 2W (Ta) Surface Mount HUML2020L8,	View
	NVTR01P02LT1G	ON Semiconductor, P-Channel 20V 1.3A (Ta) 400mW (Ta) Surface Mount SOT-23-3,	View
	BSS84PWH6327XTSA1	Infineon Technologies, P-Channel 60V 150mA (Ta) 300mW (Ta) Surface Mount PG-SOT323-3, SIPMOS®	View
	SI4143DY-T1-GE3	Vishay Siliconix, P-Channel 30V 25.3A (Tc) 6W (Tc) Surface Mount 8-SO, TrenchFET®	View
	SPP08P06PHXKSA1	Infineon Technologies, P-Channel 60V 8.8A (Tc) 42W (Tc) Through Hole PG-TO220-3, SIPMOS®	View
	SI1427EDH-T1-GE3	Vishay Siliconix, P-Channel 20V 2A (Tc) 1.56W (Ta), 2.8W (Tc) Surface Mount SC-70-6 (SOT-363), TrenchFET®	View
	FDD4243	ON Semiconductor, P-Channel 40V 6.7A (Ta), 14A (Tc) 42W (Tc) Surface Mount D-PAK (TO-252AA), PowerTrench®	View
	SUD19P06-60-GE3	Vishay Siliconix, P-Channel 60V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	SI2307BDS-T1-GE3	Vishay Siliconix, P-Channel 30V 2.5A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	SSM3J35CTC,L3F	Toshiba Semiconductor and Storage, P-Channel 20V 250mA (Ta) 500mW (Ta) Surface Mount CST3C, U-MOSVII	View

SQ2315ES-T1_GE3 - Tags

SQ2315ES-T1_GE3 SQ2315ES-T1_GE3 PDF SQ2315ES-T1_GE3 datasheet SQ2315ES-T1_GE3 specification SQ2315ES-T1_GE3 image SQ2315ES-T1_GE3 India Renesas Electronics India SQ2315ES-T1_GE3 buy SQ2315ES-T1_GE3 SQ2315ES-T1_GE3 price SQ2315ES-T1_GE3 distributor SQ2315ES-T1_GE3 supplier SQ2315ES-T1_GE3 wholesales