Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2337ES-T1_GE3

SQ2337ES-T1_GE3

SQ2337ES-T1_GE3

Part NumberSQ2337ES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CHAN 80V SOT23

DatasheetSQ2337ES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 80V 2.2A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SQ2337ES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2337ES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2337ES-T1_GE3.
We are offering SQ2337ES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2337ES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2337ES
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	290mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	620pF @ 30V
FET Feature	-
Power Dissipation (Max)	3W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2337ES-T1_GE3 - Related Products

	TSM7P06CP ROG	Taiwan Semiconductor Corporation, P-Channel 60V 7A (Tc) 15.6W (Tc) Surface Mount TO-252, (D-Pak),	View
	SIA427ADJ-T1-GE3	Vishay Siliconix, P-Channel 8V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®	View
	SQD40031EL_GE3	Vishay Siliconix, P-Channel 30V 100A (Tc) 136W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View
	MTB50P03HDLT4G	ON Semiconductor, P-Channel 30V 50A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount D2PAK,	View
	SSM6J207FE,LF	Toshiba Semiconductor and Storage, P-Channel 30V 1.4A (Ta) 500mW (Ta) Surface Mount ES6 (1.6x1.6), U-MOSII	View
	SSM3J358R,LF	Toshiba Semiconductor and Storage, P-Channel 20V 6A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVII	View
	RW1A030APT2CR	Rohm Semiconductor, P-Channel 12V 3A (Ta) 700mW (Ta) Surface Mount 6-WEMT,	View
	AOD403	Alpha & Omega Semiconductor Inc., P-Channel 30V 15A (Ta), 70A (Tc) 2.5W (Ta), 90W (Tc) Surface Mount TO-252, (D-Pak),	View
	SI1443EDH-T1-GE3	Vishay Siliconix, P-Channel 30V 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SOT-363, TrenchFET®	View
	SI1427EDH-T1-GE3	Vishay Siliconix, P-Channel 20V 2A (Tc) 1.56W (Ta), 2.8W (Tc) Surface Mount SC-70-6 (SOT-363), TrenchFET®	View
	CPH3362-TL-W	ON Semiconductor, P-Channel 100V 700mA (Ta) 1W (Ta) Surface Mount 3-CPH,	View
	NVC6S5A354PLZT1G	ON Semiconductor, P-Channel 60V 4A (Ta) 1.9W (Ta) Surface Mount 6-CPH,	View

SQ2337ES-T1_GE3 - Tags

SQ2337ES-T1_GE3 SQ2337ES-T1_GE3 PDF SQ2337ES-T1_GE3 datasheet SQ2337ES-T1_GE3 specification SQ2337ES-T1_GE3 image SQ2337ES-T1_GE3 India Renesas Electronics India SQ2337ES-T1_GE3 buy SQ2337ES-T1_GE3 SQ2337ES-T1_GE3 price SQ2337ES-T1_GE3 distributor SQ2337ES-T1_GE3 supplier SQ2337ES-T1_GE3 wholesales