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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQ2337ES Standard Package 1 Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 290mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 620pF @ 30V FET Feature - Power Dissipation (Max) 3W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3
DMG1013UW-7 Diodes Incorporated, P-Channel 20V 820mA (Ta) 310mW (Ta) Surface Mount SOT-323,
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RSD046P05TL Rohm Semiconductor, P-Channel 45V 4.5A (Tc) 850mW (Ta), 15W (Tc) Surface Mount CPT3,
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DMP1200UFR4-7 Diodes Incorporated, P-Channel 12V 2A (Ta) 480mW (Ta) Surface Mount X2-DFN1010-3,
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AUIRF4905STRL Infineon Technologies, P-Channel 55V 42A (Tc) 170W (Tc) Surface Mount D²PAK (TO-263AB), Automotive, AEC-Q101, HEXFET®
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RQ5A030APTL Rohm Semiconductor, P-Channel 12V 3A (Ta) 1W (Ta) Surface Mount TSMT3,
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SI8425DB-T1-E1 Vishay Siliconix, P-Channel 20V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-WLCSP (1.6x1.6), TrenchFET®
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SI8821EDB-T2-E1 Vishay Siliconix, P-Channel 30V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®
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IXTA24P085T IXYS, P-Channel 85V 24A (Tc) 83W (Tc) Surface Mount TO-263 (IXTA), TrenchP™
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IXTH26P20P IXYS, P-Channel 200V 26A (Tc) 300W (Tc) Through Hole TO-247 (IXTH), PolarP™
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SSM3J56ACT,L3F Toshiba Semiconductor and Storage, P-Channel 20V 1.4A (Ta) 500mW (Ta) Surface Mount CST3, U-MOSVI
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SI8817DB-T2-E1 Vishay Siliconix, P-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®
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RAF040P01TCL Rohm Semiconductor, P-Channel 12V 4A (Ta) 800mW (Ta) Surface Mount TUMT3,
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