Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2337ES-T1_GE3

SQ2337ES-T1_GE3

SQ2337ES-T1_GE3

Part NumberSQ2337ES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CHAN 80V SOT23

DatasheetSQ2337ES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 80V 2.2A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SQ2337ES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2337ES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2337ES-T1_GE3.
We are offering SQ2337ES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2337ES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2337ES
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	290mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	620pF @ 30V
FET Feature	-
Power Dissipation (Max)	3W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2337ES-T1_GE3 - Related Products

	SI4423DY-T1-E3	Vishay Siliconix, P-Channel 20V 10A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®	View
	SI4401BDY-T1-E3	Vishay Siliconix, P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®	View
	SSM3J358R,LF	Toshiba Semiconductor and Storage, P-Channel 20V 6A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVII	View
	ZXMP3A16N8TA	Diodes Incorporated, P-Channel 30V 5.6A (Ta) 1.9W (Ta) Surface Mount 8-SO,	View
	BUK6Y12-30PX	Nexperia USA Inc., P-Channel 30V 67A (Ta) 106W (Ta) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	TPH1R712MD,L1Q	Toshiba Semiconductor and Storage, P-Channel 20V 60A (Tc) 78W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVI	View
	PMV250EPEAR	Nexperia USA Inc., P-Channel 40V 1.5A (Ta) 480mW (Ta), 6.25W (Tc) Surface Mount TO-236AB,	View
	TSM650P02CX RFG	Taiwan Semiconductor Corporation, P-Channel 20V 4.1A (Tc) 1.56W (Tc) Surface Mount SOT-23,	View
	DMP21D0UFB4-7B	Diodes Incorporated, P-Channel 20V 770mA (Ta) 430mW (Ta) Surface Mount X2-DFN1006-3,	View
	CSD25304W1015T	Texas Instruments, P-Channel 20V 3A (Ta) 750mW (Ta) Surface Mount 6-DSBGA, NexFET™	View
	SSM3J144TU,LF	Toshiba Semiconductor and Storage, P-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI	View
	SSM3J374R,LF	Toshiba Semiconductor and Storage, P-Channel 30V 4A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI	View

SQ2337ES-T1_GE3 - Tags

SQ2337ES-T1_GE3 SQ2337ES-T1_GE3 PDF SQ2337ES-T1_GE3 datasheet SQ2337ES-T1_GE3 specification SQ2337ES-T1_GE3 image SQ2337ES-T1_GE3 India Renesas Electronics India SQ2337ES-T1_GE3 buy SQ2337ES-T1_GE3 SQ2337ES-T1_GE3 price SQ2337ES-T1_GE3 distributor SQ2337ES-T1_GE3 supplier SQ2337ES-T1_GE3 wholesales