Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2337ES-T1_GE3

SQ2337ES-T1_GE3

SQ2337ES-T1_GE3

Part NumberSQ2337ES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CHAN 80V SOT23

DatasheetSQ2337ES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 80V 2.2A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SQ2337ES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2337ES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2337ES-T1_GE3.
We are offering SQ2337ES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2337ES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2337ES
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	290mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	620pF @ 30V
FET Feature	-
Power Dissipation (Max)	3W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2337ES-T1_GE3 - Related Products

	TSM600P03CS RLG	Taiwan Semiconductor Corporation, P-Channel 30V 4.7A (Tc) 2.1W (Tc) Surface Mount 8-SOP,	View
	SSM3J372R,LF	Toshiba Semiconductor and Storage, P-Channel 30V 6A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI	View
	IXTP140P05T	IXYS, P-Channel 50V 140A (Tc) 298W (Tc) Through Hole TO-220AB, TrenchP™	View
	BSP322PH6327XTSA1	Infineon Technologies, P-Channel 100V 1A (Tc) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®	View
	SQD40131EL_GE3	Vishay Siliconix, P-Channel 40V 50A (Tc) 62W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View
	NTR2101PT1G	ON Semiconductor, P-Channel 8V 960mW (Ta) Surface Mount SOT-23-3 (TO-236),	View
	DMP2035UFCL-7	Diodes Incorporated, P-Channel 20V 6.6A (Ta) 740mW (Ta) Surface Mount U-DFN1616-6,	View
	SUM110P06-07L-E3	Vishay Siliconix, P-Channel 60V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
	DMG1013UW-7	Diodes Incorporated, P-Channel 20V 820mA (Ta) 310mW (Ta) Surface Mount SOT-323,	View
	IRFU9310PBF	Vishay Siliconix, P-Channel 400V 1.8A (Tc) 50W (Tc) Through Hole TO-251AA,	View
	IRFR6215TRPBF	Infineon Technologies, P-Channel 150V 13A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®	View
	SQD50P08-25L_GE3	Vishay Siliconix, P-Channel 80V 50A (Tc) 136W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View

SQ2337ES-T1_GE3 - Tags

SQ2337ES-T1_GE3 SQ2337ES-T1_GE3 PDF SQ2337ES-T1_GE3 datasheet SQ2337ES-T1_GE3 specification SQ2337ES-T1_GE3 image SQ2337ES-T1_GE3 India Renesas Electronics India SQ2337ES-T1_GE3 buy SQ2337ES-T1_GE3 SQ2337ES-T1_GE3 price SQ2337ES-T1_GE3 distributor SQ2337ES-T1_GE3 supplier SQ2337ES-T1_GE3 wholesales