Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ4850EY-T1_GE3

SQ4850EY-T1_GE3

SQ4850EY-T1_GE3

Part NumberSQ4850EY-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V 12A 8SOIC

DatasheetSQ4850EY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 12A (Tc) 6.8W (Tc) Surface Mount 8-SO

To learn about the specification of SQ4850EY-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ4850EY-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ4850EY-T1_GE3.
We are offering SQ4850EY-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ4850EY-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ4850EY
Standard Package	2500
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	22mOhm @ 6A, 5V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1250pF @ 25V
FET Feature	-
Power Dissipation (Max)	6.8W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SQ4850EY-T1_GE3 - Related Products

	FQPF6N90C	ON Semiconductor, N-Channel 900V 6A (Tc) 56W (Tc) Through Hole TO-220F, QFET®	View
	TK39N60W5,S1VF	Toshiba Semiconductor and Storage, N-Channel 600V 38.8A (Ta) 270W (Tc) Through Hole TO-247, DTMOSIV	View
	FDS86106	ON Semiconductor, N-Channel 100V 3.4A (Ta) 5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	SI4420BDY-T1-E3	Vishay Siliconix, N-Channel 30V 9.5A (Ta) 1.4W (Ta) Surface Mount 8-SO, TrenchFET®	View
	FDMS7660	ON Semiconductor, N-Channel 30V 25A (Ta), 42A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	PHB66NQ03LT,118	Nexperia USA Inc., N-Channel 25V 66A (Tc) 93W (Tc) Surface Mount D2PAK, TrenchMOS™	View
	SI7810DN-T1-E3	Vishay Siliconix, N-Channel 100V 3.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	IRF3710ZPBF	Infineon Technologies, N-Channel 100V 59A (Tc) 160W (Tc) Through Hole TO-220AB, HEXFET®	View
	FDMA410NZ	ON Semiconductor, N-Channel 20V 9.5A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®	View
	IPA60R099P7XKSA1	Infineon Technologies, N-Channel 600V 31A (Tc) 29W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™ P7	View
	CSD18531Q5AT	Texas Instruments, N-Channel 60V 100A (Ta) 3.1W (Ta), 156W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	STH175N4F6-6AG	STMicroelectronics, N-Channel 40V 120A (Tc) 150W (Tc) Surface Mount H2Pak-2, Automotive, AEC-Q101, STripFET™ F6	View

SQ4850EY-T1_GE3 - Tags

SQ4850EY-T1_GE3 SQ4850EY-T1_GE3 PDF SQ4850EY-T1_GE3 datasheet SQ4850EY-T1_GE3 specification SQ4850EY-T1_GE3 image SQ4850EY-T1_GE3 India Renesas Electronics India SQ4850EY-T1_GE3 buy SQ4850EY-T1_GE3 SQ4850EY-T1_GE3 price SQ4850EY-T1_GE3 distributor SQ4850EY-T1_GE3 supplier SQ4850EY-T1_GE3 wholesales