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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQD50N04-5M6 Standard Package 1 Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 25V FET Feature - Power Dissipation (Max) 71W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252AA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
DMN10H170SK3Q-13 Diodes Incorporated, N-Channel 100V 12A (Tc) 42W (Tc) Surface Mount TO-252, Automotive, AEC-Q101
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STF13N60M2 STMicroelectronics, N-Channel 600V 11A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ II Plus
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SIRA32DP-T1-RE3 Vishay Siliconix, N-Channel 25V 60A (Tc) 65.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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STD134N4F7AG STMicroelectronics, N-Channel 40V 80A (Tc) 134W (Tc) Surface Mount DPAK, STripFET™
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STF8NM50N STMicroelectronics, N-Channel 500V 5A (Tc) 20W (Tc) Through Hole TO-220FP, MDmesh™ II
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TSM60NB260CI C0G Taiwan Semiconductor Corporation, N-Channel 600V 13A (Tc) 32.1W (Tc) Through Hole ITO-220AB,
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CSD17507Q5A Texas Instruments, N-Channel 30V 13A (Ta), 65A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6), NexFET™
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SI4800BDY-T1-E3 Vishay Siliconix, N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SO, TrenchFET®
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PSMN2R8-40PS,127 Nexperia USA Inc., N-Channel 40V 100A (Tc) 211W (Tc) Through Hole TO-220AB,
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MMBF170-7-F Diodes Incorporated, N-Channel 60V 500mA (Ta) 300mW (Ta) Surface Mount SOT-23-3,
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SI3456DDV-T1-E3 Vishay Siliconix, N-Channel 30V 6.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP, TrenchFET®
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STU3N62K3 STMicroelectronics, N-Channel 620V 2.7A (Tc) 45W (Tc) Through Hole I-PAK, SuperMESH3™
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