Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQD50N06-09L_GE3

SQD50N06-09L_GE3

SQD50N06-09L_GE3

Part NumberSQD50N06-09L_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V 50A

DatasheetSQD50N06-09L

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 50A (Tc) 136W (Tc) Surface Mount TO-252, (D-Pak)

To learn about the specification of SQD50N06-09L_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQD50N06-09L_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQD50N06-09L_GE3.
We are offering SQD50N06-09L_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQD50N06-09L_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQD50N06-09L
Standard Package	2000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	72nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3065pF @ 25V
FET Feature	-
Power Dissipation (Max)	136W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252, (D-Pak)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

SQD50N06-09L_GE3 - Related Products

	TSM089N08LCR RLG	Taiwan Semiconductor Corporation, N-Channel 80V 67A (Tc) 83W (Tc) Surface Mount 8-PDFN (5x6),	View
	CSD16407Q5	Texas Instruments, N-Channel 25V 31A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6), NexFET™	View
	IPA80R280P7XKSA1	Infineon Technologies, N-Channel 800V 17A (Tc) 30W (Tc) Through Hole TO-220-3F, CoolMOS™	View
	IRFI1310NPBF	Infineon Technologies, N-Channel 100V 24A (Tc) 56W (Tc) Through Hole TO-220AB Full-Pak, HEXFET®	View
	AOD1R4A70	Alpha & Omega Semiconductor Inc., N-Channel 700V 3.8A (Tc) 48W (Tc) Surface Mount TO-252 (DPAK), aMOS™	View
	DMT6009LFG-7	Diodes Incorporated, N-Channel 60V 11A (Ta), 34A (Tc) 2.08W (Ta), 19.2W (Tc) Surface Mount PowerDI3333-8,	View
	IRFIB7N50APBF	Vishay Siliconix, N-Channel 500V 6.6A (Tc) 60W (Tc) Through Hole TO-220-3,	View
	RS1G150MNTB	Rohm Semiconductor, N-Channel 40V 15A (Ta) 3W (Ta), 25W (Tc) Surface Mount 8-HSOP,	View
	PSMN1R7-25YLDX	Nexperia USA Inc., N-Channel 25V 100A (Tc) 135W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	IRLTS6342TRPBF	Infineon Technologies, N-Channel 30V 8.3A (Ta) 2W (Ta) Surface Mount 6-TSOP, HEXFET®	View
	FDB390N15A	ON Semiconductor, N-Channel 150V 27A (Tc) 75W (Tc) Surface Mount D²PAK, PowerTrench®	View
	TPH2R506PL,L1Q	Toshiba Semiconductor and Storage, N-Channel 60V 100A (Tc) 132W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSIX-H	View

SQD50N06-09L_GE3 - Tags

SQD50N06-09L_GE3 SQD50N06-09L_GE3 PDF SQD50N06-09L_GE3 datasheet SQD50N06-09L_GE3 specification SQD50N06-09L_GE3 image SQD50N06-09L_GE3 India Renesas Electronics India SQD50N06-09L_GE3 buy SQD50N06-09L_GE3 SQD50N06-09L_GE3 price SQD50N06-09L_GE3 distributor SQD50N06-09L_GE3 supplier SQD50N06-09L_GE3 wholesales