SQD50N06-09L_GE3
SQD50N06-09L_GE3
Part Number SQD50N06-09L_GE3 Description MOSFET N-CH 60V 50A Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 50A (Tc) 136W (Tc) Surface Mount TO-252, (D-Pak)
To learn about the specification of SQD50N06-09L_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQD50N06-09L_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQD50N06-09L_GE3.
We are offering SQD50N06-09L_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SQD50N06-09L_GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQD50N06-09L Standard Package 2000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3065pF @ 25V FET Feature - Power Dissipation (Max) 136W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SQD50N06-09L_GE3 - Related ProductsMore >>
IRL8113PBF Infineon Technologies, N-Channel 30V 105A (Tc) 110W (Tc) Through Hole TO-220AB, HEXFET®
View
SUM40012EL-GE3 Vishay Siliconix, N-Channel 40V 150A (Tc) 150W (Tc) Surface Mount TO-263 (D²Pak), TrenchFET®
View
IRF630STRRPBF Vishay Siliconix, N-Channel 200V 9A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263),
View
SIHG35N60E-GE3 Vishay Siliconix, N-Channel 600V 32A (Tc) 250W (Tc) Through Hole TO-247AC,
View
IRF1018ESTRLPBF Infineon Technologies, N-Channel 60V 79A (Tc) 110W (Tc) Surface Mount D2PAK, HEXFET®
View
SIHU2N80E-GE3 Vishay Siliconix, N-Channel 800V 2.8A (Tc) 62.5W (Tc) Through Hole IPAK (TO-251),
View
IRF540PBF Vishay Siliconix, N-Channel 100V 28A (Tc) 150W (Tc) Through Hole TO-220AB,
View
IPP023N04NGXKSA1 Infineon Technologies, N-Channel 40V 90A (Tc) 167W (Tc) Through Hole PG-TO220-3, OptiMOS™
View
STW8N90K5 STMicroelectronics, N-Channel 900V 8A (Tc) 130W (Tc) Through Hole TO-247-3, MDmesh™ K5
View
STL56N3LLH5 STMicroelectronics, N-Channel 30V 56A (Tc) 62.5W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™ V
View
IPC100N04S5L1R1ATMA1 Infineon Technologies, N-Channel 40V 100A (Tc) 150W (Tc) Surface Mount PG-TDSON-8-34, Automotive, AEC-Q101, OptiMOS™
View
FDP090N10 ON Semiconductor, N-Channel 100V 75A (Tc) 208W (Tc) Through Hole TO-220-3, PowerTrench®
View
SQD50N06-09L_GE3 - Tags
English
