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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQD70140EL Standard Package 1 Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 15mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 25V FET Feature - Power Dissipation (Max) 71W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252AA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IRFD224PBF Vishay Siliconix, N-Channel 250V 630mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,
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IRL3705NPBF Infineon Technologies, N-Channel 55V 89A (Tc) 170W (Tc) Through Hole TO-220AB, HEXFET®
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SI7858BDP-T1-GE3 Vishay Siliconix, N-Channel 12V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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RQ6E085BNTCR Rohm Semiconductor, N-Channel 30V 8.5A (Tc) 1.25W (Tc) Surface Mount SOT-457,
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PSMN3R0-60BS,118 Nexperia USA Inc., N-Channel 60V 100A (Tc) 306W (Tc) Surface Mount D2PAK,
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STP11N60DM2 STMicroelectronics, N-Channel 600V 10A (Tc) 110W (Tc) Through Hole TO-220, MDmesh™ DM2
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RS3E095BNGZETB Rohm Semiconductor, N-Channel 30V 9.5A (Ta) 2W (Tc) Surface Mount 8-SOP,
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IPW60R099C6FKSA1 Infineon Technologies, N-Channel 600V 37.9A (Tc) 278W (Tc) Through Hole PG-TO247-3, CoolMOS™
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STD170N4F7AG STMicroelectronics, N-Channel 40V 80A (Tc) 172W (Tc) Surface Mount DPAK, STripFET™
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TN2540N8-G Microchip Technology, N-Channel 400V 260mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),
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IRFD220PBF Vishay Siliconix, N-Channel 200V 800mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,
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IRFS3107TRL7PP Infineon Technologies, N-Channel 75V 240A (Tc) 370W (Tc) Surface Mount D2PAK (7-Lead), HEXFET®
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